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SeekIC No. : 00144058 Detail

STGB3NB60FDT4: IGBT Transistors N-Ch 600 Volt 3.0 A

STGB3NB60FDT4 Data Sheet

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Part Number:: STGB3NB60FDT4
Mfg:: STMicroelectronics
Supply Ability:: 5000

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1~5000

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Upload time: 2025/12/4

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US $.81 - 1.29 / Piece

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Product Details

Quick Details

Configuration :	Single	Collector- Emitter Voltage VCEO Max :	600 V
Collector-Emitter Saturation Voltage :	2.4 V	Maximum Gate Emitter Voltage :	+/- 20 V
Continuous Collector Current at 25 C :	3 A	Gate-Emitter Leakage Current :	100 nA
Power Dissipation :	68 W	Maximum Operating Temperature :	+ 150 C
Package / Case :	D2PAK-3	Packaging :	Reel

Description

Collector- Emitter Voltage VCEO Max : 600 V
Gate-Emitter Leakage Current : 100 nA
Maximum Operating Temperature : + 150 C
Configuration : Single
Packaging : Reel
Maximum Gate Emitter Voltage : +/- 20 V
Continuous Collector Current at 25 C : 3 A
Package / Case : D2PAK-3
Collector-Emitter Saturation Voltage : 2.4 V
Power Dissipation : 68 W

Parameters:

Technical/Catalog Information	STGB3NB60FDT4
Vendor	STMicroelectronics
Category	Discrete Semiconductor Products
Input Type	Standard
Voltage - Collector Emitter Breakdown (Max)	600V
Current - Collector (Ic) (Max)	6A
Vce(on) (Max) @ Vge, Ic	2.4V @ 15V, 3A
Power - Max	68W
Mounting Type	Surface Mount
Package / Case	D²Pak, TO-263 (2 leads + tab)
Packaging	Tape & Reel (TR)
Lead Free Status	Contains Lead
RoHS Status	RoHS Non-Compliant
Other Names	STGB3NB60FDT4 STGB3NB60FDT4 497 2449 2 ND 49724492ND 497-2449-2

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STGB3NB60FDT4

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