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STGB3NB60FDT4

IGBT Transistors N-Ch 600 Volt 3.0 A

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SeekIC No. : 00144058 Detail

STGB3NB60FDT4: IGBT Transistors N-Ch 600 Volt 3.0 A

STGB3NB60FDT4 Data Sheet

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Part Number:
STGB3NB60FDT4
Mfg:
STMicroelectronics
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/4/18

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Product Details

Quick Details

Configuration : Single Collector- Emitter Voltage VCEO Max : 600 V
Collector-Emitter Saturation Voltage : 2.4 V Maximum Gate Emitter Voltage : +/- 20 V
Continuous Collector Current at 25 C : 3 A Gate-Emitter Leakage Current : 100 nA
Power Dissipation : 68 W Maximum Operating Temperature : + 150 C
Package / Case : D2PAK-3 Packaging : Reel    

Description

Collector- Emitter Voltage VCEO Max : 600 V
Gate-Emitter Leakage Current : 100 nA
Maximum Operating Temperature : + 150 C
Configuration : Single
Packaging : Reel
Maximum Gate Emitter Voltage : +/- 20 V
Continuous Collector Current at 25 C : 3 A
Package / Case : D2PAK-3
Collector-Emitter Saturation Voltage : 2.4 V
Power Dissipation : 68 W


Parameters:

Technical/Catalog InformationSTGB3NB60FDT4
VendorSTMicroelectronics
CategoryDiscrete Semiconductor Products
Input TypeStandard
Voltage - Collector Emitter Breakdown (Max)600V
Current - Collector (Ic) (Max)6A
Vce(on) (Max) @ Vge, Ic2.4V @ 15V, 3A
Power - Max68W
Mounting TypeSurface Mount
Package / CaseD²Pak, TO-263 (2 leads + tab)
PackagingTape & Reel (TR)
Lead Free StatusContains Lead
RoHS StatusRoHS Non-Compliant
Other Names STGB3NB60FDT4
STGB3NB60FDT4
497 2449 2 ND
49724492ND
497-2449-2



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