STGB3NB60SD Selling Leads, Price trend, STGB3NB60SD DataSheet download, circuit diagram from SeekIC.com

ApplicationGAS DISCHARGE LAMPSTATIC RELAYSMOTOR CONTROLSpecifications Symbol Parameter Value Unit VCES Collector-Emitter Voltage (VGS = 0) 600 V VGE Gate-Emitter Voltage ± 20 V IC Collector Current (continuous) at Tc = 25 oC 6 A IC Colle...

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SeekIC No. : 004507640 Detail

STGB3NB60SD: ApplicationGAS DISCHARGE LAMPSTATIC RELAYSMOTOR CONTROLSpecifications Symbol Parameter Value Unit VCES Collector-Emitter Voltage (VGS = 0) 600 V VGE Gate-Emitter V...

STGB3NB60SD Data Sheet

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Part Number:: STGB3NB60SD
Supply Ability:: 5000

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1~5000

Unit Price
Negotiable

Processing time
15 Days

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Upload time: 2025/12/23

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STGB10N60L evaluate
ApplicationELECTRONIC IGNITIONLIGHT DIMMERSTATIC RELAYSSpecifications Symbol Parameter ...
STGB10NB37LZ evaluate
US $.53 - .72 / Piece

IGBT Transistors 10 A 410V INTERNALLY CLAMPED IGBT
STGB10NB40LZT4 evaluate
US $.81 - 1.29 / Piece

IGBT Transistors N-Ch Clamped 20 Amp

Product Details

Description

Application

GAS DISCHARGE LAMP
STATIC RELAYS
MOTOR CONTROL

Specifications

Symbol	Parameter	Value	Unit
V_CES	Collector-Emitter Voltage (V_GS= 0)	600	V
V_GE	Gate-Emitter Voltage	± 20	V
I_C	Collector Current (continuous) at T_c= 25 ^oC	6	A
I_C	Collector Current (continuous) at T_c= 100 ^oC	3	A
I_CM(•)	Collector Current (pulsed)	25	A
P_tot	Total Dissipation at T_c= 25 ^oC	70	W
	Derating Factor	0.46	W/^oC
T_stg	Storage Temperature	60 to 175	^oC
T_j	Max.Operating Junction Temperature	150	^oC

Description

Using the latest high voltage technology based on a patented strip layout, STGB3NB60SD STMicroelectronics has designed an advanced family of IGBTs, the PowerMESH™ IGBTs, with outstanding perfomances. The suffix "S" identifies a family optimized to achieve minimum on-voltage drop for low frequency applications (<1kHz).

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STGB3NB60SD

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