STGB6NC60HD-1

Collector-Emitter Saturation Voltage :
Continuous Collector Current at 25 C :
Gate-Emitter Leakage Current :
Power Dissipation :
Collector- Emitter Voltage VCEO Max : 600 V
Maximum Operating Temperature : + 150 C
Packaging : Tube
Configuration : Single
Maximum Gate Emitter Voltage : +/- 20 V
Package / Case : I2PAK-3


Features:

Type	VCES	VCE(sat)max @25°C	IC @100°C
STGB6NC60HD	600V	<2.5V	7A
STGB6NC60HD-1	600V	<2.5V	7A
STGP6NC60HD	600V	<2.5V	7A
STGF6NC60HD	600V	<2.5V	3A

Low on voltage drop (Vcesat)
Low C_RES / C_IES ratio (no cross-conduction susceptibility)
Very soft ultra fast recovery antiparallel diode
High frequency operation


Application

High frequency inverters
SMPS and PFC in both hard switch and resonant topologies
Motor drivers


Specifications

Symbol	Parameter	Value		Unit
		D²PAK/I²PAK/TO-220	TO-220FP
VCES	Collector-emitter voltage (VGS = 0)	600		V
IC(1)	Collector current (continuous) at TC = 25°C	15	6	A
IC(1)	Collector current (continuous) at TC = 100°C	7	3	A
ICM(2)	Collector current (pulsed)	21		A
VGE	Gate-emitter voltage	±20		V
IF	Diode RMS forward current at Tc=25°C	10		A
PTOT	Total dissipation at TC = 25°C	56	20	W
VISO	Insulation withstand voltage A.C.(t=1sec;Tc=25°C)	--	2500
Tstg	Storage temperature	55 to 150		°C
Tj	Operating junction temperature
TI	Maximum lead temperature for soldering purpose (for 10sec. 1.6 mm from case)	300		°C

1. Calculated according to the iterative formula::I_C(T_C)=T_JMAX T_C/R_{THJ C} * V_CESAT(MAX)(T_C, I_C)
2. Pulse width limited by max junction temperature

Description

Using the latest high voltage technology based on a patented strip layout, STGB6NC60HD-1 STMicroelectronics has designed an advaced family of IGBTs, the PowerMESH™ IGBTs, with outstanding performances. The suffix "H" identifies a family optimized for high frequency application in order to achieve very high switching performances (reduced tfall) mantaining a low voltage drop.