Features: Type VCES VCE(sat)max@25°C IC@100°C STGB6NC60HD 600V <2.5V 7A STGB6NC60HD-1 600V <2.5V 7A STGP6NC60HD 600V <2.5V 7A STGF6NC60HD 600V <2.5V 3A Low on voltage drop (Vcesat) Low CRES / CIES ratio (no cross-conduction susce...
STGB6NC60HD: Features: Type VCES VCE(sat)max@25°C IC@100°C STGB6NC60HD 600V <2.5V 7A STGB6NC60HD-1 600V <2.5V 7A STGP6NC60HD 600V <2.5V 7A STGF6NC60HD ...
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ApplicationELECTRONIC IGNITIONLIGHT DIMMERSTATIC RELAYSSpecifications Symbol Parameter ...
| Type | VCES | VCE(sat)max @25°C |
IC @100°C |
| STGB6NC60HD |
600V |
<2.5V |
7A |
| STGB6NC60HD-1 |
600V |
<2.5V |
7A |
| STGP6NC60HD |
600V |
<2.5V |
7A |
| STGF6NC60HD |
600V |
<2.5V |
3A |
|
Symbol |
Parameter |
Value |
Unit | |
| D²PAK/I²PAK/TO-220 | TO-220FP | |||
|
VCES |
Collector-emitter voltage (VGS = 0) |
600 |
V | |
|
IC(1) |
Collector current (continuous) at TC = 25°C |
15 |
6 |
A |
|
IC(1) |
Collector current (continuous) at TC = 100°C |
7 |
3 |
A |
|
ICM(2) |
Collector current (pulsed) |
21 |
A | |
|
VGE |
Gate-emitter voltage |
±20 |
V | |
|
IF |
Diode RMS forward current at Tc=25°C |
10 |
A | |
|
PTOT |
Total dissipation at TC = 25°C |
56 |
20 |
W |
|
VISO |
Insulation withstand voltage A.C.(t=1sec;Tc=25°C) |
-- |
2500 |
|
|
Tstg |
Storage temperature |
55 to 150 |
°C | |
|
Tj |
Operating junction temperature | |||
|
TI |
Maximum lead temperature for soldering purpose (for 10sec. 1.6 mm from case) |
300 |
°C | |
1. Calculated according to the iterative formula::IC(TC)=TJMAX TC/RTHJ C * VCESAT(MAX)(TC, IC)
2. Pulse width limited by max junction temperature
Using the latest high voltage technology based on a patented strip layout, STGB6NC60HD STMicroelectronics has designed an advaced family of IGBTs, the PowerMESH™ IGBTs, with outstanding performances. The suffix "H" identifies a family optimized for high frequency application in order to achieve very high switching performances (reduced tfall) mantaining a low voltage drop.