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STGB6NC60HDT4

IGBT Transistors PowerMESH TM IGBT

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SeekIC No. : 00142537 Detail

STGB6NC60HDT4: IGBT Transistors PowerMESH TM IGBT

STGB6NC60HDT4 Data Sheet

floor Price/Ceiling Price

US $ .4~.61 / Piece | Get Latest Price
Part Number:
STGB6NC60HDT4
Mfg:
STMicroelectronics
Supply Ability:
5000

Price Break

  • Qty
  • 0~1
  • 1~10
  • 10~100
  • 100~250
  • Unit Price
  • $.61
  • $.54
  • $.44
  • $.4
  • Processing time
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
View more price & deliveries
Total Cost: $ 0.00

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Upload time: 2025/12/25

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Product Details

Quick Details

Configuration : Single Collector- Emitter Voltage VCEO Max : 600 V
Collector-Emitter Saturation Voltage : 2.7 V Maximum Gate Emitter Voltage : +/- 20 V
Gate-Emitter Leakage Current : 100 nA Power Dissipation : 80 W
Maximum Operating Temperature : + 150 C Package / Case : D2PAK-3
Packaging : Reel    

Description

Continuous Collector Current at 25 C :
Collector- Emitter Voltage VCEO Max : 600 V
Gate-Emitter Leakage Current : 100 nA
Maximum Operating Temperature : + 150 C
Configuration : Single
Packaging : Reel
Maximum Gate Emitter Voltage : +/- 20 V
Collector-Emitter Saturation Voltage : 2.7 V
Package / Case : D2PAK-3
Power Dissipation : 80 W


Parameters:

Technical/Catalog InformationSTGB6NC60HDT4
VendorSTMicroelectronics
CategoryDiscrete Semiconductor Products
Input Type-
Voltage - Collector Emitter Breakdown (Max)600V
Current - Collector (Ic) (Max)15A
Vce(on) (Max) @ Vge, Ic-
Power - Max-
Mounting TypeSurface Mount
Package / CaseD²Pak, SMD-220, TO-263 (2 leads + tab)
PackagingTape & Reel (TR)
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names STGB6NC60HDT4
STGB6NC60HDT4
497 5110 2 ND
49751102ND
497-5110-2



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