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STGB7NB40LZ

Features: POLYSILICON GATE VOLTAGE DRIVENLOW THRESHOLD VOLTAGELOW ON-VOLTAGE DROPLOW GATE CHARGEHIGH CURRENT CAPABILITYHIGH VOLTAGE CLAMPING FEATUREApplicationAUTOMOTIVE IGNITIONSpecifications Symbol Parameter Value Unit VCES Collector-Emitter Voltage (VGS = 0) CLAMPED ...

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SeekIC No. : 004507642 Detail

STGB7NB40LZ: Features: POLYSILICON GATE VOLTAGE DRIVENLOW THRESHOLD VOLTAGELOW ON-VOLTAGE DROPLOW GATE CHARGEHIGH CURRENT CAPABILITYHIGH VOLTAGE CLAMPING FEATUREApplicationAUTOMOTIVE IGNITIONSpecifications ...

STGB7NB40LZ Data Sheet

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Part Number:
STGB7NB40LZ
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2025/12/23

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Product Details

Description



Features:

 POLYSILICON GATE VOLTAGE DRIVEN
 LOW THRESHOLD VOLTAGE
 LOW ON-VOLTAGE DROP
 LOW GATE CHARGE
 HIGH CURRENT CAPABILITY
 HIGH VOLTAGE CLAMPING FEATURE


Application

AUTOMOTIVE IGNITION


Specifications

Symbol
 Parameter
Value
Unit
VCES
 Collector-Emitter Voltage (VGS = 0)
CLAMPED
V

VECR

 Emitter-Collector Voltage

20

V

VGE
 Gate-Emitter Voltage
CLAMPED
V
IC
 Collector Current (continuous) at Tc = 25 oC
14
A
RG
 Minimum External Gate Resistor
500
W
PTOT
 Total Dissipation at TC = 25°C
100
W
Derating Factor

0.66

W/°C
ECL
 Single Pulse Collector to Emitter Avalanche Energy
IC= 13 A ; Tj= 150°C (see fig.1-2)
130
mJ

EECAV

Reverse Avalanche Energy
IC = 7 A ;f= 100 Hz ; Tc = 25°C

10

mJ

Tstg
 Storage Temperature
55 to 150

 
oC
 
Tj
 Operating Junction Temperature



Description

Using the latest high voltage technology based on a patented strip layout, STGB7NB40LZ STMicroelectronics has designed an advanced family of IGBTs, the PowerMESH™ IGBTs, with outstanding performances. The built in collector-gate zener exhibits a very precise active clamping while the gate-emitter zener supplies an ESD protection.




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