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STGB7NC60HD

Features: LOWER ON-VOLTAGE DROP (Vcesat)OFF LOSSES INCLUDE TAIL CURRENTLOSSES INCLUDE DIODE RECOVERY ENERGYLOWER CRES/CIES RATIOHIGH FREQUENCY OPERATION UP TO 70 KHzVERY SOFT ULTRA FAST RECOVERY ANTI PARALLEL DIODENEW GENERATION PRODUCTS WITH TIGHTER PARAMETER DISTRIBUTIONApplicationHIGH FREQUENCY...

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SeekIC No. : 004507646 Detail

STGB7NC60HD: Features: LOWER ON-VOLTAGE DROP (Vcesat)OFF LOSSES INCLUDE TAIL CURRENTLOSSES INCLUDE DIODE RECOVERY ENERGYLOWER CRES/CIES RATIOHIGH FREQUENCY OPERATION UP TO 70 KHzVERY SOFT ULTRA FAST RECOVERY ANT...

STGB7NC60HD Data Sheet

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Part Number:
STGB7NC60HD
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2025/12/23

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Product Details

Description



Features:

 LOWER ON-VOLTAGE DROP (Vcesat)
 OFF LOSSES INCLUDE TAIL CURRENT
 LOSSES INCLUDE DIODE RECOVERY ENERGY
 LOWER CRES/CIES RATIO
 HIGH FREQUENCY OPERATION UP TO 70 KHz
 VERY SOFT ULTRA FAST RECOVERY ANTI PARALLEL DIODE
 NEW GENERATION PRODUCTS WITH TIGHTER PARAMETER DISTRIBUTION


Application

 HIGH FREQUENCY INVERTERS
 SMPS AND PFC IN BOTH HARD SWITCH AND RESONANT TOPOLOGIES
 MOTOR DRIVERS


Specifications

Symbol
 Parameter
Value
Unit
     STGP7NC60HD
STGB7NC60HD		  STGF7NC60HD  
VCES
 Collector-Emitter Voltage (VGS = 0)
600
V
VECR
 Emitter-Collector Voltage
20
V
VGE
 Gate-Emitter Voltage
± 20
V
IC
 Collector Current (continuous) at TC = 25°C (#)
25

 10
A
IC
 Collector Current (continuous) at TC = 100°C (#)
14

 6
A
ICM(•)
 Collector Current (pulsed)
50
A

IF

 Diode RMS Forward Current at TC = 25°C

20

A

Ptot
 Total Dissipation at Tc = 25 oC
80

 25
W
 Derating Factor
0.64

0.20
W/oC

VISO

 Insulation Withstand Voltage A.C.(t = 1 sec; Tc = 25°C)
--

2500

V

Tstg
 Storage Temperature

55 to 150
oC
Tj
 Operating Junction Temperature
oC



Description

Using the latest high voltage technology based on a patented strip layout, STGB7NC60HD STMicroelectronics has designed an advanced family of IGBTs, the PowerMESH ™ IGBTs, with outstanding performances. The suffix "H" identifies a family optimized for high frequency applications in order to achieve very high switching performances (reduced tfall) mantaining a low voltage drop.




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