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ApplicationMOTOR CONTROLSSMPS AND PFC IN BOTH HARD SWITCHING AND RESONANT TOPOLOGIESSpecifications Symbol Parameter Value Unit TO220/D2PAK TO220FP DPAK VCES Collector-Emitter Voltage (VGS = 0) 600 V VECR Emitter-Collector Voltage 20 V VGE Gate-Em...

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SeekIC No. : 004507648 Detail

STGD3NB60F: ApplicationMOTOR CONTROLSSMPS AND PFC IN BOTH HARD SWITCHING AND RESONANT TOPOLOGIESSpecifications Symbol Parameter Value Unit TO220/D2PAK TO220FP DPAK VCES Collector-Emit...

STGD3NB60F Data Sheet

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Part Number:: STGD3NB60F
Supply Ability:: 5000

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Upload time: 2025/12/23

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STGD10NC60HDT4 evaluate
US $.52 - .6 / Piece

IGBT Transistors 600 Volt 10 Amp
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IGBT Transistors N Ch 10A 600V
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US $.43 - .71 / Piece

IGBT Transistors N Ch 600V 10A

Product Details

Description

Application

MOTOR CONTROLS
SMPS AND PFC IN BOTH HARD SWITCHING AND RESONANT TOPOLOGIES

Specifications

Symbol	Parameter	Value			Unit
Symbol	Parameter	TO220/D2PAK	TO220FP	DPAK	Unit
V_CES	Collector-Emitter Voltage (V_GS= 0)	600			V
V_ECR	Emitter-Collector Voltage	20			V
V_GE	Gate-Emitter Voltage	± 20			V
I_C	Collector Current (continuous) at T_c= 25 ^oC	6			A
I_C	Collector Current (continuous) at T_c= 100 ^oC	3			A
I_CM(•)	Collector Current (pulsed)	24			A
I_{f (1)}	Forward Current	3			A
I_fm(1)	Forward Current Pulsed	24			A
P_tot	Total Dissipation at T_c= 25 ^oC	68	25	60	W
	Derating Factor	0.55	0.2	0.47	W/^oC
V_ISO	Insulation Withstand Voltage (AC)	--	2500	--	V
T_stg	Storage Temperature	65 to 150			^oC ^oC
T_j	Max.Operating Junction Temperature	150			^oC ^oC

Description

Using the latest high voltage technology based on a patented strip layout, STGD3NB60F STMicroelectronics has designed an advanced family of IGBTs, the Power- MESH™ IGBTs, with outstanding performances. The suffix "F" identifies a family optimized to achieve very low switching times for frequency applications (<40 KHz)

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STGD3NB60F

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