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STGD3NB60H

IGBT Transistors N-CH 600V 3A

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SeekIC No. : 00143990 Detail

STGD3NB60H: IGBT Transistors N-CH 600V 3A

STGD3NB60H Data Sheet

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Part Number:
STGD3NB60H
Mfg:
STMicroelectronics
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2026/1/16

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Product Details

Quick Details

Configuration : Single Collector- Emitter Voltage VCEO Max : 600 V
Maximum Gate Emitter Voltage : +/- 20 V Maximum Operating Temperature : + 150 C
Package / Case : DPAK-3    

Description

Collector-Emitter Saturation Voltage :
Continuous Collector Current at 25 C :
Gate-Emitter Leakage Current :
Power Dissipation :
Packaging :
Collector- Emitter Voltage VCEO Max : 600 V
Maximum Operating Temperature : + 150 C
Configuration : Single
Maximum Gate Emitter Voltage : +/- 20 V
Package / Case : DPAK-3


Application

 HIGH FREQUENCY MOTOR CONTROLS
 SMPS AND PFC IN BOTH HARD SWITCH AND RESONANT TOPOLOGIES


Specifications

Symbol
 Parameter
Value
Unit
VCES
 Collector-Emitter Voltage (VGS = 0)
600
V
VGE
 Gate-Emitter Voltage
± 20
V
IC
 Collector Current (continuous) at Tc = 25 oC
6
A
IC
 Collector Current (continuous) at Tc = 100 oC
3
A
ICM(•)
 Collector Current (pulsed)
24
A
Ptot
 Total Dissipation at Tc = 25 oC
35
W
 Derating Factor
0.28
W/oC
Tstg
 Storage Temperature
-65 to 150
oC
Tj
 Max.Operating Junction Temperature

150
oC



Description

Using the latest high voltage technology based on a patented strip layout, STGD3NB60H STMicroelectronics has designed an advanced family of IGBTs, the PowerMESH] IGBTs, with outstanding perfomances. The suffix "H" identifies a family optimized to achieve very low switching times for high frequency applications (<120kHz).




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