ApplicationGAS DISCHARGE LAMPSTATIC RELAYSMOTOR CONTROLSpecifications Symbol Parameter Value Unit VCES Collector-Emitter Voltage (VGS = 0) 600 V VGE Gate-Emitter Voltage ± 20 V IC Collector Current (continuous) at Tc = 25 oC 6 A IC Colle...
STGD3NB60SD: ApplicationGAS DISCHARGE LAMPSTATIC RELAYSMOTOR CONTROLSpecifications Symbol Parameter Value Unit VCES Collector-Emitter Voltage (VGS = 0) 600 V VGE Gate-Emitter V...
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|
Symbol |
Parameter |
Value |
Unit | |
|
VCES |
Collector-Emitter Voltage (VGS = 0) |
600 |
V | |
|
VGE |
Gate-Emitter Voltage |
± 20 |
V | |
|
IC |
Collector Current (continuous) at Tc = 25 oC |
6 |
A | |
|
IC |
Collector Current (continuous) at Tc = 100 oC |
3 |
A | |
|
ICM(•) |
Collector Current (pulsed) |
25 |
A | |
|
Ptot |
Total Dissipation at Tc = 25 oC |
48 |
W | |
| Derating Factor |
0.32 |
W/oC | ||
|
Tstg |
Storage Temperature |
-65 to 175 |
oC
| |
|
Tj |
Max.Operating Junction Temperature |
170 |
oC | |
Using the latest high voltage technology based on a patented strip layout, STGD3NB60SD STMicroelectronics has designed an advanced family of IGBTs, the PowerMESHÔ IGBTs, with outstanding perfomances. The suffix "S" identifies a family optimized to achieve minimum on-voltage drop for low frequency applications (<1kHz).