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SeekIC No. : 00144010 Detail

STGD7NB60S: IGBT Transistors N-Ch 600 Volt 7 Amp

STGD7NB60S Data Sheet

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Part Number:: STGD7NB60S
Mfg:: STMicroelectronics
Supply Ability:: 5000

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1~5000

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Negotiable

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Upload time: 2025/12/23

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Recent History
What is this?

STGD10NC60HDT4 evaluate
US $.52 - .6 / Piece

IGBT Transistors 600 Volt 10 Amp
STGD10NC60HT4 evaluate
IGBT Transistors N Ch 10A 600V
STGD10NC60KDT4 evaluate
US $.43 - .71 / Piece

IGBT Transistors N Ch 600V 10A

Product Details

Quick Details

Configuration :	Single	Collector- Emitter Voltage VCEO Max :	600 V
Maximum Gate Emitter Voltage :	+/- 20 V	Maximum Operating Temperature :	+ 150 C
Package / Case :	DPAK-3

Description

Collector-Emitter Saturation Voltage :
Continuous Collector Current at 25 C :
Gate-Emitter Leakage Current :
Power Dissipation :
Packaging :
Collector- Emitter Voltage VCEO Max : 600 V
Maximum Operating Temperature : + 150 C
Configuration : Single
Maximum Gate Emitter Voltage : +/- 20 V
Package / Case : DPAK-3

Application

LIGHT DIMMER
STATIC RELAYS
MOTOR CONTROL

Specifications

Symbol	Parameter	Value	Unit
V_CES	Collector-Emitter Voltage (V_GS= 0)	600	V
V_GE	Gate-Emitter Voltage	± 20	V
I_C	Collector Current (continuous) at T_c= 25 ^oC	15	A
I_C	Collector Current (continuous) at T_c= 100 ^oC	7	A
I_CM(•)	Collector Current (pulsed)	60	A
P_tot	Total Dissipation at T_c= 25 ^oC	55	W
	Derating Factor	0.44	W/^oC
T_stg	Storage Temperature	-65 to 150	^oC
T_j	Max.Operating Junction Temperature	150	^oC

Description

Using the latest high voltage technology based on a patented strip layout, STGD7NB60S STMicroelectronics has designed an advanced family of IGBTs, the PowerMESHÔ IGBTs, with outstanding perfomances. The suffix "S" identifies a family optimized to achieve minimum on-voltage drop for low frequency applications (<1kHz).

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STGD7NB60S

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