STGF19NC60HD

Continuous Collector Current at 25 C :
Collector- Emitter Voltage VCEO Max : 600 V
Maximum Operating Temperature : + 150 C
Packaging : Tube
Configuration : Single
Maximum Gate Emitter Voltage : +/- 20 V
Package / Case : TO-220FP-3
Gate-Emitter Leakage Current : +/- 100 nA
Power Dissipation : 35 W
Collector-Emitter Saturation Voltage : 1.8 V/1.6 V


Features:

Low on-voltage drop (Vcesat)
Low CRES / CIES ratio (no cross-conduction susceptbility)
Very soft ultra fast recovery antiparallel diode


Application

High frequency motor controls
SMPS and PFC in both hard switch and resonant topologies
Motor drivers


Specifications

Symbol	Parameter	Value	Unit
VCES	Collector-emitter voltage (VGS = 0)	600	V
IC(1)	Collector current (continuous) at TC = 25°C	16	A
IC(1)	Collector current (continuous) at TC = 100°C	9	A
ICL(2)	Turn-off minimum current	40	A
IF	Diode RMS forward current at TC = 25°C	20	A
VGE	Gate-emitter voltage	±20	V
PTOT	Total dissipation at TC = 25°C	35	W
Tj	Operating junction temperature	55 to 150	°C

Description

Using the latest high voltage technology based on a patented strip layout, STMicroelectronics has designed an advanced family of IGBTs, the PowerMESH™ IGBTs, with outstanding performances. The suffix "H" identifies a family optimized for high frequency applications in order to achieve very high switching performances (reduced tfall) mantaining a low voltage drop.

Parameters:

Technical/Catalog Information	STGF19NC60HD
Vendor	STMicroelectronics
Category	Discrete Semiconductor Products
Input Type	Standard
Voltage - Collector Emitter Breakdown (Max)	600V
Current - Collector (Ic) (Max)	16A
Vce(on) (Max) @ Vge, Ic	2.5V @ 15V, 12A
Power - Max	32W
Mounting Type	Through Hole
Package / Case	TO-220-3 Full Pack (Straight Leads)
Packaging	Tube
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	STGF19NC60HD STGF19NC60HD 497 5740 ND 4975740ND 497-5740