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STGP10NB60SFP

IGBT Transistors N-CH 10 A 600V PowerMESH

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SeekIC No. : 00143831 Detail

STGP10NB60SFP: IGBT Transistors N-CH 10 A 600V PowerMESH

STGP10NB60SFP Data Sheet

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Part Number:
STGP10NB60SFP
Mfg:
STMicroelectronics
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2025/12/23

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Product Details

Quick Details

Configuration : Single Collector- Emitter Voltage VCEO Max : 600 V
Maximum Gate Emitter Voltage : +/- 20 V Maximum Operating Temperature : + 150 C
Package / Case : TO-220FP-3 Packaging : Tube    

Description

Collector-Emitter Saturation Voltage :
Continuous Collector Current at 25 C :
Gate-Emitter Leakage Current :
Power Dissipation :
Collector- Emitter Voltage VCEO Max : 600 V
Maximum Operating Temperature : + 150 C
Packaging : Tube
Configuration : Single
Maximum Gate Emitter Voltage : +/- 20 V
Package / Case : TO-220FP-3


Application

 LIGHT DIMMER
 STATIC RELAYS
 MOTOR CONTROL


Specifications

Symbol
 Parameter
Value
Unit
VCES
 Collector-Emitter Voltage (VGS = 0)
600
V

VECR

 Emitter-Collector Voltage

20

V

VGE
 Gate-Emitter Voltage
± 20
V
IC
 Collector Current (continuous) at Tc = 25 oC
20
A
IC
 Collector Current (continuous) at Tc = 100 oC
10
A
ICM(•)
 Collector Current (pulsed)
80
A
Ptot
 Total Dissipation at Tc = 25 oC
31.5
W
 Derating Factor
0.21
W/oC
Tstg
 Storage Temperature
65 to 150
oC
 
Tj
 Max.Operating Junction Temperature

150

  
oC



Description

Using the latest high voltage technology based on a patented strip layout, STGP10NB60SFP STMicroelectronics has designed an advanced family of IGBTs, the PowerMESH™ IGBTs, with outstanding performances. The suffix "S" identifies a family optimized achieve minimum on-voltage drop for low frequency applications (<1kHz).




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