STGP10NC60H

Continuous Collector Current at 25 C :
Collector- Emitter Voltage VCEO Max : 600 V
Gate-Emitter Leakage Current : 100 nA
Maximum Operating Temperature : + 150 C
Packaging : Tube
Configuration : Single
Maximum Gate Emitter Voltage : +/- 20 V
Collector-Emitter Saturation Voltage : 1.9 V
Package / Case : TO-220-3
Power Dissipation : 60 W


Features:

Low on-voltage drop (V_cesat)
Low C_RES / C_IES ratio (no cross-conduction susceptbility)
Very soft ultra fast recovery antiparallel diode


Application

High frequency motor controls
SMPS and PFC in both hard switch and resonant topologies
Motor drivers


Specifications

Symbol	Parameter	Value	Unit
VCES IC(1)	Collector-emitter voltage (VGS = 0) Collector current (continuous) at TC = 25	600 20	V A
IC(1) ICL(2)	Collector current (continuous) at TC = 100 Collector current (pulsed)	10 40	A A
VGE PTOT	Gate-emitter voltage Total dissipation at TC = 25	±20 60	V W
Tstg Tj	Storage temperature Operating junction temperature	55 to 150

1. Calculated according to the iterative formula:
                        T_JMAX T^C
IC(TC)= ------------------------------------------------------
                       R_THJ C * V_CESAT(MAX)(T_C, I_C)

2. V_clamp=480V, T_j=150, R_G=10, V_GE=15V


Description

Using the latest high voltage technology based on a patented strip layout, STGP10NC60H STMicroelectronics has designed an advanced family of IGBTs, the PowerMESH™ IGBTs, with outstanding performances. The suffix "H" identifies a family optimized for high frequency applications in order to achieve very high switching performances (reduced tfall) mantaining a low voltage drop.