IGBT Transistors PowerMESH TM IGBT
STGP10NC60HD: IGBT Transistors PowerMESH TM IGBT
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ApplicationELECTRONIC IGNITIONLIGHT DIMMERSTATIC RELAYSSpecifications Symbol Parameter ...
| Configuration : | Single | Collector- Emitter Voltage VCEO Max : | 600 V |
| Collector-Emitter Saturation Voltage : | 1.9 V | Maximum Gate Emitter Voltage : | +/- 20 V |
| Gate-Emitter Leakage Current : | 100 nA | Power Dissipation : | 56 W |
| Maximum Operating Temperature : | + 150 C | Package / Case : | DPAK-3 |
| Packaging : | Tube |
| Technical/Catalog Information | STGP10NC60HD |
| Vendor | STMicroelectronics |
| Category | Discrete Semiconductor Products |
| Input Type | Standard |
| Voltage - Collector Emitter Breakdown (Max) | 600V |
| Current - Collector (Ic) (Max) | 20A |
| Vce(on) (Max) @ Vge, Ic | 2.5V @ 15V, 5A |
| Power - Max | 65W |
| Mounting Type | Through Hole |
| Package / Case | TO-220-3 (Straight Leads) |
| Packaging | Tube |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | STGP10NC60HD STGP10NC60HD 497 5118 5 ND 49751185ND 497-5118-5 |