STGP10NC60HD, US $ .42-.7 , STMicroelectronics, STGP10NC60HD DataSheet download, circuit diagram from SeekIC.com

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STGP10NC60HD: IGBT Transistors PowerMESH TM IGBT

STGP10NC60HD Data Sheet

US $ .42~.7 / Piece | Get Latest Price

Part Number:: STGP10NC60HD
Mfg:: STMicroelectronics
Supply Ability:: 5000

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IGBT Transistors N-Ch Clamped 20 Amp

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Configuration :	Single	Collector- Emitter Voltage VCEO Max :	600 V
Collector-Emitter Saturation Voltage :	1.9 V	Maximum Gate Emitter Voltage :	+/- 20 V
Gate-Emitter Leakage Current :	100 nA	Power Dissipation :	56 W
Maximum Operating Temperature :	+ 150 C	Package / Case :	DPAK-3
Packaging :	Tube

Description

Continuous Collector Current at 25 C :
Collector- Emitter Voltage VCEO Max : 600 V
Gate-Emitter Leakage Current : 100 nA
Maximum Operating Temperature : + 150 C
Packaging : Tube
Configuration : Single
Maximum Gate Emitter Voltage : +/- 20 V
Collector-Emitter Saturation Voltage : 1.9 V
Package / Case : DPAK-3
Power Dissipation : 56 W

Parameters:

Technical/Catalog Information	STGP10NC60HD
Vendor	STMicroelectronics
Category	Discrete Semiconductor Products
Input Type	Standard
Voltage - Collector Emitter Breakdown (Max)	600V
Current - Collector (Ic) (Max)	20A
Vce(on) (Max) @ Vge, Ic	2.5V @ 15V, 5A
Power - Max	65W
Mounting Type	Through Hole
Package / Case	TO-220-3 (Straight Leads)
Packaging	Tube
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	STGP10NC60HD STGP10NC60HD 497 5118 5 ND 49751185ND 497-5118-5

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STGP10NC60HD

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