IGBT Transistors PowerMESH TM IGBT
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ApplicationELECTRONIC IGNITIONLIGHT DIMMERSTATIC RELAYSSpecifications Symbol Parameter ...
| Configuration : | Single | Collector- Emitter Voltage VCEO Max : | 600 V | ||
| Collector-Emitter Saturation Voltage : | 2 V | Maximum Gate Emitter Voltage : | +/- 20 V | ||
| Gate-Emitter Leakage Current : | 100 nA | Maximum Operating Temperature : | + 150 C | ||
| Package / Case : | TO-220-3 | Packaging : | Tube |