IGBT Transistors N-Ch 600 Volt 18 Amp
STGP12NB60HD: IGBT Transistors N-Ch 600 Volt 18 Amp
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ApplicationELECTRONIC IGNITIONLIGHT DIMMERSTATIC RELAYSSpecifications Symbol Parameter ...
| Configuration : | Single | Collector- Emitter Voltage VCEO Max : | 600 V | ||
| Collector-Emitter Saturation Voltage : | 2 V | Maximum Gate Emitter Voltage : | +/- 20 V | ||
| Continuous Collector Current at 25 C : | 30 A | Gate-Emitter Leakage Current : | 100 nA | ||
| Power Dissipation : | 100 W | Maximum Operating Temperature : | + 150 C | ||
| Package / Case : | TO-220-3 | Packaging : | Tube |
|
Symbol |
Parameter |
Value |
Unit |
|
VCES |
Collector-Emitter Voltage (VGS = 0) |
600 |
V |
|
VECR |
Emitter-Collector Voltage |
20 |
V |
|
VGE |
Gate-Emitter Voltage |
± 20 |
V |
|
IC |
Collector Current (continuous) at Tc = 25 oC |
24 |
A |
|
IC |
Collector Current (continuous) at Tc = 100 oC |
12 |
A |
|
ICM() |
Collector Current (pulsed) |
96 |
A |
|
Ptot |
Total Dissipation at Tc = 25 oC |
100 |
W |
| Derating Factor |
0.8 |
W/oC | |
|
Tstg |
Storage Temperature |
65 to 150 |
oC |
|
Tj |
Max. Operating Junction Temperature |
150 |
oC |