STGP12NB60K

Collector- Emitter Voltage VCEO Max : 600 V
Maximum Operating Temperature : + 150 C
Packaging : Tube
Configuration : Single
Power Dissipation : 125 W
Maximum Gate Emitter Voltage : +/- 20 V
Continuous Collector Current at 25 C : 30 A
Package / Case : TO-220AB-3
Gate-Emitter Leakage Current : +/- 100 nA
Collector-Emitter Saturation Voltage : 2.8 V


Application

 HIGH FREQUENCY MOTOR CONTROLS
 SMPS
 UPS


Specifications

Symbol	Parameter	Value		Unit
VCES	Collector-Emitter Voltage (VGS = 0)	600		V
VGE	Gate-Emitter Voltage	± 20		V
IC	Collector Current (continuous) at Tc = 25 oC	30		A
IC	Collector Current (continuous) at Tc = 100 oC	18		A
ICM(•)	Collector Current (pulsed)	60		A
Tsc	Short Circuit Withstand	10		ms
Ptot	Total Dissipation at Tc = 25 oC	125		W
	Derating Factor	1.0		W/oC
Tstg	Storage Temperature	-65 to 150		oC
Tj	Max.Operating Junction Temperature	150		oC

Description

Using the latest high voltage technology based on a patented strip layout, STGP12NB60K STMicroelectronics has designed an advanced family of IGBTs, the Power- MESH™ IGBTs, with outstanding performances. The suffix "K" identifies a family optimized for high frequency applications (up to 50kHz) and short circuit proof in order to achieve very high switching performances (reduced tfall) mantaining a low voltage drop.