STGP12NB60KD

Collector- Emitter Voltage VCEO Max : 600 V
Maximum Operating Temperature : + 150 C
Packaging : Tube
Configuration : Single
Power Dissipation : 125 W
Maximum Gate Emitter Voltage : +/- 20 V
Continuous Collector Current at 25 C : 30 A
Package / Case : TO-220AB-3
Gate-Emitter Leakage Current : +/- 100 nA
Collector-Emitter Saturation Voltage : 2.8 V


Application

 HIGH FREQUENCY MOTOR CONTROLS
 SMPS
 UPS


Specifications

Symbol	Parameter	Value	Unit
VCES	Collector-Emitter Voltage (VGS = 0)	600	V
VECR	Emitter-Collector Voltage	20	V
VGE	Gate-Emitter Voltage	± 20	V
IC	Collector Current (continuous) at Tc = 25 oC	30	A
IC	Collector Current (continuous) at Tc = 100 oC	18	A
ICM(•)	Collector Current (pulsed)	60	A
Tsc	Short Circuit Withstand	10	ms
Ptot	Total Dissipation at Tc = 25 oC	125	W
	Derating Factor	1.0	W/oC
Tstg	Storage Temperature	65 to 150	oC
Tj	Operating Junction Temperature	150	oC

Description

Using the latest high voltage technology based on a patented strip layout, STGP12NB60KD STMicroelectronics has designed an advanced family of IGBTs, the Power- MESH™ IGBTs, with outstanding performances. The suffix "K" identifies a family optimized for high frequency applications (up to 50kHz) and short circuit proof in order to achieve very high switching performances (reduced tfall) mantaining a low voltage drop.