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STGP19NC60W: IGBT Transistors N-CH 600V Ultra fast PowerMESH

STGP19NC60W Data Sheet

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Part Number:: STGP19NC60W
Mfg:: STMicroelectronics
Supply Ability:: 5000

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1~5000

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Upload time: 2026/1/16

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US $1.1 - 1.46 / Piece

IGBT Transistors N-Ch Clamped 20 Amp

Product Details

Quick Details

Configuration :	Single	Collector- Emitter Voltage VCEO Max :	600 V
Maximum Gate Emitter Voltage :	+/- 20 V	Maximum Operating Temperature :	+ 150 C
Package / Case :	TO-220-3	Packaging :	Tube

Description

Collector-Emitter Saturation Voltage :
Continuous Collector Current at 25 C :
Gate-Emitter Leakage Current :
Power Dissipation :
Collector- Emitter Voltage VCEO Max : 600 V
Maximum Operating Temperature : + 150 C
Packaging : Tube
Configuration : Single
Maximum Gate Emitter Voltage : +/- 20 V
Package / Case : TO-220-3

Features:

High frequency operation
Low C_RES/ C_IESratio (no cross-conduction susceptbility)

Application

High frequency motor controls, inverters, UPS
HF, SMPS and PFC in both hard switch and resonant topologies

Specifications

SYMBOL	PARAMETER	VALUE	UNIT
V_CES	Collector-emitter voltage (V_GS = 0)	600	V
I_C(1)	Collector current (continuous) at T_C = 25°C	40	V
I_C(1)	Collector current (continuous) at T_C = 100°C	22	V
I_CL(2)	Collector current (pulsed)	35	A
V_GE	Gate-emitter voltage	±20	A
P_TOT	Total dissipation at Tc = 25	125	W
T_stg	Storage temperature	55 to 150
T_J	Operating junction temperature	55 to 150

Description

Using the latest high voltage technology based on a patented strip layout, STMicroelectronics has designed an advanced family of IGBTs, the STGP19NC60W PowerMESH™ IGBTs, with outstanding performances. The suffix "W" identifies a family optimized for very high frequency application.

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STGP19NC60W

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