STGP20NB37LZ

Features: POLYSILICONGATE VOLTAGE DRIVENLOW THRESHOLD VOLTAGELOW ON-VOLTAGEDROPHIGH CURRENT CAPABILITYHIGH VOLTAGE CLAMPING FEATUREApplicationAUTOMOTIVE IGNITIONSpecifications Symbol Parameter Value Unit VCES Collector-Emitter Voltage (VGS = 0) CLAMPED V VECR Emit...

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SeekIC No. : 004507665 Detail

STGP20NB37LZ: Features: POLYSILICONGATE VOLTAGE DRIVENLOW THRESHOLD VOLTAGELOW ON-VOLTAGEDROPHIGH CURRENT CAPABILITYHIGH VOLTAGE CLAMPING FEATUREApplicationAUTOMOTIVE IGNITIONSpecifications Symbol Paramet...

floor Price/Ceiling Price

Part Number:
STGP20NB37LZ
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2025/12/23

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Product Details

Description



Features:

 POLYSILICONGATE VOLTAGE DRIVEN
 LOW THRESHOLD VOLTAGE
 LOW ON-VOLTAGEDROP
 HIGH CURRENT CAPABILITY
 HIGH VOLTAGE CLAMPING FEATURE



Application

 AUTOMOTIVE IGNITION


Specifications

Symbol
Parameter
Value
Unit
VCES
Collector-Emitter Voltage (VGS = 0)
CLAMPED
V

VECR

Emitter-Collector Voltage

20

V

VGE
Gate-Emitter Voltage
CLAMPED
V
IC
Collector Current (continuous) at Tc = 25 oC
40
A
IC
Collector Current (continuous) at Tc = 100 oC
30
A
ICM(•)
Collector Current (pulsed)
80
A

 EAS

  Single Pulse Energy Tc = 25  oC

 700

 mJ

Ptot
Total Dissipation at Tc = 25 oC
150
W
Derating Factor
1
W/oC

  ESD

 ESD (Human Body Model)

 4

 KV

Tstg
Storage Temperature
65 to 175
oC
 
Tj
Max.Operating Junction Temperature

175

 
oC



Description

Using the latest high voltage technology based on patented strip layout, STGP20NB37LZ STMicroelectronics has designed an advanced family of IGBTs with outstandingperformances.

The built in collector-gate zener exhibits a very precise active clamping while the gate-emitter zener supplies an ESD protection.




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