IGBT Transistors N-Ch 600 Volt 20 Amp
STGP20NB60H: IGBT Transistors N-Ch 600 Volt 20 Amp
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Configuration : | Single | Collector- Emitter Voltage VCEO Max : | 600 V |
Collector-Emitter Saturation Voltage : | 2.3 V | Maximum Gate Emitter Voltage : | +/- 20 V |
Gate-Emitter Leakage Current : | 100 nA | Power Dissipation : | 125 W |
Maximum Operating Temperature : | + 150 C | Package / Case : | TO-220-3 |
Packaging : | Tube |
Symbol |
Parameter |
Value |
Unit |
VCES |
Collector-Emitter Voltage (VGS = 0) |
600 |
V |
VECR |
Emitter-Collector Voltage |
20 |
V |
VGE |
Gate-Emitter Voltage |
± 20 |
V |
IC |
Collector Current (continuous) at Tc = 25 oC |
40 |
A |
IC |
Collector Current (continuous) at Tc = 100 oC |
20 |
A |
ICM(•) |
Collector Current (pulsed) |
160 |
A |
Ptot |
Total Dissipation at Tc = 25 oC |
125 |
W |
Derating Factor |
1.0 |
W/oC | |
Tstg |
Storage Temperature |
-65 to 150 |
oC |
Tj |
Max. Operating Junction Temperature |
150 |
oC |
Using the latest high voltage technology based on a patented strip layout, STGP20NB60H STMicroelectronics has designed an advanced family of IGBTs, the PowerMESH] IGBTs, with outstanding perfomances. The suffix "H" identifies a family optimized to achieve very low switching times for high frequency applications (<120kHz).