STGP3NB60FD

Collector- Emitter Voltage VCEO Max : 600 V
Gate-Emitter Leakage Current : 100 nA
Maximum Operating Temperature : + 150 C
Packaging : Tube
Configuration : Single
Maximum Gate Emitter Voltage : +/- 20 V
Continuous Collector Current at 25 C : 3 A
Collector-Emitter Saturation Voltage : 1.9 V
Power Dissipation : 25 W
Package / Case : TO-220-3


Application

 MOTOR CONTROLS
 SMPS AND PFC IN BOTH HARD SWITCHING AND RESONANT TOPOLOGIES


Specifications

Symbol	Parameter	Value			Unit
		TO220/D2PAK	TO220FP	DPAK
VCES	Collector-Emitter Voltage (VGS = 0)	600			V
VECR	Emitter-Collector Voltage	20			V
VGE	Gate-Emitter Voltage	± 20			V
IC	Collector Current (continuous) at Tc = 25 oC	6			A
IC	Collector Current (continuous) at Tc = 100 oC	3			A
ICM(•)	Collector Current (pulsed)	24			A
If (1)	Forward Current	3			A
Ifm(1)	Forward Current Pulsed	24			A
Ptot	Total Dissipation at Tc = 25 oC	68	25	60	W
	Derating Factor	0.55	0.2	0.47	W/oC
VISO	Insulation Withstand Voltage (AC)	--	2500	--	V
Tstg	Storage Temperature	65 to 150			oC   oC
Tj	Max.Operating Junction Temperature	150

Description

Using the latest high voltage technology based on a patented strip layout, STGP3NB60FD STMicroelectronics has designed an advanced family of IGBTs, the Power- MESH™ IGBTs, with outstanding performances. The suffix "F" identifies a family optimized to achieve very low switching times for frequency applications (<40 KHz)

Parameters:

Technical/Catalog Information	STGP3NB60FD
Vendor	STMicroelectronics
Category	Discrete Semiconductor Products
Input Type	Standard
Voltage - Collector Emitter Breakdown (Max)	600V
Current - Collector (Ic) (Max)	6A
Vce(on) (Max) @ Vge, Ic	2.4V @ 15V, 3A
Power - Max	68W
Mounting Type	Through Hole
Package / Case	TO-220-3 (Straight Leads)
Packaging	Tube
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	STGP3NB60FD STGP3NB60FD 497 2652 5 ND 49726525ND 497-2652-5