STGP7NB60H

Continuous Collector Current at 25 C :
Packaging :
Collector- Emitter Voltage VCEO Max : 600 V
Gate-Emitter Leakage Current : 100 nA
Maximum Operating Temperature : + 150 C
Configuration : Single
Maximum Gate Emitter Voltage : +/- 20 V
Collector-Emitter Saturation Voltage : 2.3 V
Package / Case : TO-220-3
Power Dissipation : 80 W


Application

 HIGH FREQUENCY MOTOR CONTROLS
 SMPS AND PFC IN BOTH HARD SWITCH ND RESONANT TOPOLOGIES


Specifications

Symbol	Parameter	Value		Unit
VCES	Collector-Emitter Voltage (VGS = 0)	600		V
VECR	Emitter-Collector Voltage	20		V
VGE	Gate-Emitter Voltage	± 20		V
IC	Collector Current (continuous) at Tc = 25 oC	14		A
IC	Collector Current (continuous) at Tc = 100 oC	7		A
ICM(•)	Collector Current (pulsed)	56		A
Ptot	Total Dissipation at Tc = 25 oC	80		W
	Derating Factor	0.64		W/oC
Tstg	Storage Temperature	65 to 150		oC
Tj	Max.Operating Junction Temperature	150		oC

Description

Using the latest high voltage technology based n a patented strip layout, STGP7NB60H STMicroelectronics as designed an advanced family of IGBTs, the owerMESH] IGBTs, with outstanding erfomances. The suffix "H" identifies a family ptimized to achieve very low switching times for igh frequency applications (<120kHz).