STGP7NB60HD

Collector- Emitter Voltage VCEO Max : 600 V
Maximum Operating Temperature : + 150 C
Packaging : Tube
Configuration : Single
Maximum Gate Emitter Voltage : +/- 20 V
Package / Case : TO-220AB-3
Gate-Emitter Leakage Current : +/- 100 nA
Collector-Emitter Saturation Voltage : 2.8 V
Continuous Collector Current at 25 C : 14 A
Power Dissipation : 80 W


Application

 HIGH FREQUENCY MOTOR CONTROLS
 SMPS AND PFC IN BOTH HARD SWITCH ND RESONANT TOPOLOGIES


Specifications

Symbol	Parameter	Value		Unit
		STGP7NB60HD	STGP7NB60HDFP
VCES	Collector-Emitter Voltage (VGS = 0)	600	600	V
VGE	Gate-Emitter Voltage	± 20	± 20	V
IC	Collector Current (continuous) at Tc = 25 oC	14	13	A
IC	Collector Current (continuous) at Tc = 100 oC	7	6	A
ICM(•)	Collector Current (pulsed)	56	56	A
Ptot	Total Dissipation at Tc = 25 oC	80	35	W
	Derating Factor	0.64	0.28	W/oC
Tstg	Storage Temperature	-65 to 150		oC
Tj	Max.Operating Junction Temperature	150		oC

Description

Using the latest high voltage technology based n a patented strip layout, STGP7NB60HD STMicroelectronics as designed an advanced family of IGBTs, the werMESH] IGBTs, with outstanding erfomances. The suffix "H" identifies a family ptimized to achieve very low switching times for igh frequency applications (<120kHz).