IGBT Transistors V-FAST POWERMESH
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ApplicationELECTRONIC IGNITIONLIGHT DIMMERSTATIC RELAYSSpecifications Symbol Parameter ...
| Configuration : | Single | Collector- Emitter Voltage VCEO Max : | 600 V | ||
| Maximum Gate Emitter Voltage : | +/- 20 V | Maximum Operating Temperature : | + 150 C | ||
| Package / Case : | TO-220-3 | Packaging : | Tube |
|
Symbol |
Parameter |
Value |
Unit | |
|
TO-220 |
DPAK |
|||
|
VCES |
Collector-Emitter Voltage (VGS = 0) |
600 |
V | |
|
VECR |
Emitter-Collector Voltage |
20 |
V | |
|
VGE |
Gate-Emitter Voltage |
± 20 |
V | |
|
IC |
Collector Current (continuous) at TC = 25°C (#) |
25 |
A | |
|
IC |
Collector Current (continuous) at TC = 100°C (#) |
14 |
A | |
|
ICM(•) |
Collector Current (pulsed) |
50 |
A | |
|
Ptot |
Total Dissipation at Tc = 25 oC |
80 |
70 |
W |
| Derating Factor |
0.64 |
0.56 |
W/oC | |
|
Tstg |
Storage Temperature |
55 to 150 |
oC | |
|
Tj |
Operating Junction Temperature |
oC | ||
Using the latest high voltage technology based on a patented strip layout, STGP7NC60H STMicroelectronics has designed an advanced family of IGBTs, the PowerMESH ™ IGBTs, with outstanding performances. The suffix "H" identifies a family optimized for high frequency applications in order to achieve very high switching performances (reduced tfall) mantaining a low voltage drop.
| Technical/Catalog Information | STGP7NC60H |
| Vendor | STMicroelectronics |
| Category | Discrete Semiconductor Products |
| Input Type | Standard |
| Voltage - Collector Emitter Breakdown (Max) | 600V |
| Current - Collector (Ic) (Max) | 25A |
| Vce(on) (Max) @ Vge, Ic | 2.5V @ 15V, 7A |
| Power - Max | 80W |
| Mounting Type | Through Hole |
| Package / Case | TO-220-3 (Straight Leads) |
| Packaging | Tube |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | STGP7NC60H STGP7NC60H 497 4113 5 ND 49741135ND 497-4113-5 |