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STGW20NB60HD: IGBT Transistors N-Ch 600 Volt 12 Amp

STGW20NB60HD Data Sheet

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Part Number:: STGW20NB60HD
Mfg:: STMicroelectronics
Supply Ability:: 5000

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Upload time: 2024/5/16

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STGW12NB60H evaluate
IGBT Transistors N-Ch 600 Volt 12 Amp
STGW12NB60HD evaluate
ApplicationHIGH FREQUENCY MOTOR CONTROLSSMPS AND PFC IN BOTH HARD SWITCH AND RESONANT TOPOLOGIESUP...
STGW19NC60H evaluate
US $.59 - .8 / Piece

IGBT Transistors 19 A 600V FAST IGBT

Product Details

Quick Details

Configuration :	Single	Collector- Emitter Voltage VCEO Max :	600 V
Maximum Gate Emitter Voltage :	+/- 20 V	Maximum Operating Temperature :	+ 150 C
Package / Case :	TO-247-3	Packaging :	Tube

Description

Collector-Emitter Saturation Voltage :
Continuous Collector Current at 25 C :
Gate-Emitter Leakage Current :
Power Dissipation :
Collector- Emitter Voltage VCEO Max : 600 V
Maximum Operating Temperature : + 150 C
Packaging : Tube
Configuration : Single
Maximum Gate Emitter Voltage : +/- 20 V
Package / Case : TO-247-3

Application

HIGH FREQUENCY MOTOR CONTROLS
WELDING EQUIPMENTS
SMPS AND PFC IN BOTH HARD SWITCH AND RESONANT TOPOLOGIES

Specifications

Symbol	Parameter	Value	Unit
V_CES	Collector-Emitter Voltage (V_GS= 0)	600	V
V_GE	Gate-Emitter Voltage	± 20	V
I_C	Collector Current (continuous) at T_c= 25 oC	40	A
I_C	Collector Current (continuous) at T_c= 100 oC	20	A
I_CM(•)	Collector Current (pulsed)	160	A
P_tot	Total Dissipation at T_c= 25 oC	150	W
	Derating Factor	1.2	W/^oC
T_stg	Storage Temperature	-65 to 150	^oC
T_j	Max.Operating Junction Temperature	150	^oC

Description

Using the latest high voltage technology based on a patented strip layout, STGW20NB60HD STMicroelectronics has designed an advanced family of IGBTs, the PowerMESH] IGBTs, with outstanding perfomances. The suffix "H" identifies a family optimized to achieve very low switching times for high frequency applications (<120kHz).

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STGW20NB60HD

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