STGW20NB60KD

IGBT Transistors N-Ch 600 Volt 20 Amp

product image

STGW20NB60KD Picture
SeekIC No. : 00143790 Detail

STGW20NB60KD: IGBT Transistors N-Ch 600 Volt 20 Amp

floor Price/Ceiling Price

Part Number:
STGW20NB60KD
Mfg:
STMicroelectronics
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

SeekIC Buyer Protection PLUS - newly updated for 2013!

  • Escrow Protection.
  • Guaranteed refunds.
  • Secure payments.
  • Learn more >>

Month Sales

268 Transactions

Rating

evaluate  (4.8 stars)

Upload time: 2024/3/27

Payment Methods

All payment methods are secure and covered by SeekIC Buyer Protection PLUS.

Notice: When you place an order, your payment is made to SeekIC and not to your seller. SeekIC only pays the seller after confirming you have received your order. We will also never share your payment details with your seller.
Product Details

Quick Details

Configuration : Single Collector- Emitter Voltage VCEO Max : 600 V
Collector-Emitter Saturation Voltage : 2.8 V Maximum Gate Emitter Voltage : +/- 20 V
Continuous Collector Current at 25 C : 50 A Gate-Emitter Leakage Current : +/- 100 nA
Power Dissipation : 170 W Maximum Operating Temperature : + 150 C
Package / Case : TO-247-3 Packaging : Tube    

Description

Collector- Emitter Voltage VCEO Max : 600 V
Maximum Operating Temperature : + 150 C
Packaging : Tube
Configuration : Single
Continuous Collector Current at 25 C : 50 A
Maximum Gate Emitter Voltage : +/- 20 V
Power Dissipation : 170 W
Package / Case : TO-247-3
Gate-Emitter Leakage Current : +/- 100 nA
Collector-Emitter Saturation Voltage : 2.8 V


Features:

OFF LOSSES INCLUDE TAIL CURRENT
HIGH CURRENT CAPABILITY
HIGH INPUT IMPEDANCE (VOLTAGE DRIVEN)
LOW ON-VOLTAGE DROP (Vcesat)
LOW ON-LOSSES
LOW GATE CHARGE
VERY HIGH FREQUENCY OPERATION
SHORT CIRCUIT RATED
LATCH CURRENT FREE OPERATION



Application

HIGH FREQUENCY MOTOR CONTROLS
U.P.S
WELDING EQUIPMENTS



Specifications

Symbol
Parameter
Value
Unit
VCES
Collector-Emitter Voltage (VGS = 0)
600
V
VECR
Emitter-Collector Voltage
20
V
VGE
Gate-Emitter Voltage
± 20
V
IC
Collector Current (continuous) at 25°C (#)
50
A
IC
Collector Current (continuous) at 100°C (#)
25
A
ICM(•)
Collector Current (pulsed)
100
A

Tsc

Short Circuit Withstand

10

ms

Ptot
Total Dissipation at Tc = 25 oC
170
W
Derating Factor
1.2
W/oC
Tstg
Storage Temperature
55 to 150
oC
Tj
Operating Junction Temperature
oC



Description

Using the latest high voltage technology based on a patented strip layout, STGW20NB60KD STMicroelectronics has designed an advanced family of IGBTs, the PowerMESH ™ IGBTs, with outstanding performances. The suffix "K" identifies a family optimized for high frequency motor control applications with short circuit withstand capability.




Parameters:

Technical/Catalog InformationSTGW20NB60KD
VendorSTMicroelectronics
CategoryDiscrete Semiconductor Products
Input TypeStandard
Voltage - Collector Emitter Breakdown (Max)600V
Current - Collector (Ic) (Max)50A
Vce(on) (Max) @ Vge, Ic2.8V @ 15V, 20A
Power - Max170W
Mounting TypeThrough Hole
Package / CaseTO-247-3
PackagingTube
Lead Free StatusContains Lead
RoHS StatusRoHS Non-Compliant
Other Names STGW20NB60KD
STGW20NB60KD
497 2654 5 ND
49726545ND
497-2654-5



Customers Who Bought This Item Also Bought

Margin,quality,low-cost products with low minimum orders. Secure your online payments with SeekIC Buyer Protection.
Optoelectronics
Cables, Wires - Management
Circuit Protection
Isolators
Computers, Office - Components, Accessories
Boxes, Enclosures, Racks
View more