IGBT Transistors N-Ch 600 Volt 30 Amp
STGW20NC60VD: IGBT Transistors N-Ch 600 Volt 30 Amp
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ApplicationHIGH FREQUENCY MOTOR CONTROLSSMPS AND PFC IN BOTH HARD SWITCH AND RESONANT TOPOLOGIESUP...
Configuration : | Single | Collector- Emitter Voltage VCEO Max : | 600 V | ||
Collector-Emitter Saturation Voltage : | 2.5 V | Maximum Gate Emitter Voltage : | +/- 20 V | ||
Continuous Collector Current at 25 C : | 60 A | Gate-Emitter Leakage Current : | +/- 100 nA | ||
Power Dissipation : | 200 W | Maximum Operating Temperature : | + 150 C | ||
Package / Case : | TO-247-3 | Packaging : | Tube |
Symbol |
Parameter |
Value |
Unit |
VCES |
Collector-Emitter Voltage (VGS = 0) |
600 |
V |
VECR |
Emitter-Collector Voltage |
20 |
V |
VGE |
Gate-Emitter Voltage |
± 20 |
V |
IC |
Collector Current (continuous) at 25°C (#) |
60 |
A |
IC |
Collector Current (continuous) at 100°C (#) |
30 |
A |
ICM(1) |
Collector Current (pulsed) |
100 |
A |
If |
Diode RMS Forward Current at TC = 25°C |
30 |
A |
Ptot |
Total Dissipation at Tc = 25 oC |
200 |
W |
Derating Factor |
0.96 |
W/oC | |
Tstg |
Storage Temperature |
55 to 150 |
oC |
Tj |
Operating Junction Temperature |
oC |
Using the latest high voltage technology based on a patented strip layout, STGW20NC60VD STMicroelectronics has designed an advanced family of IGBTs, the PowerMESH ™ IGBTs, with outstanding performances. The suffix "V" identifies a family optimized for high frequency applications.
Technical/Catalog Information | STGW20NC60VD |
Vendor | STMicroelectronics |
Category | Discrete Semiconductor Products |
Input Type | Standard |
Voltage - Collector Emitter Breakdown (Max) | 600V |
Current - Collector (Ic) (Max) | 60A |
Vce(on) (Max) @ Vge, Ic | 2.5V @ 15V, 20A |
Power - Max | 200W |
Mounting Type | Through Hole |
Package / Case | TO-247-3 |
Packaging | Tube |
Lead Free Status | Lead Free |
RoHS Status | RoHS Compliant |
Other Names | STGW20NC60VD STGW20NC60VD 497 4357 5 ND 49743575ND 497-4357-5 |