STGW20NC60VD

IGBT Transistors N-Ch 600 Volt 30 Amp

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STGW20NC60VD: IGBT Transistors N-Ch 600 Volt 30 Amp

floor Price/Ceiling Price

US $ 2.53~3.85 / Piece | Get Latest Price
Part Number:
STGW20NC60VD
Mfg:
STMicroelectronics
Supply Ability:
5000

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  • $3.85
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  • Processing time
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Upload time: 2024/5/16

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Product Details

Quick Details

Configuration : Single Collector- Emitter Voltage VCEO Max : 600 V
Collector-Emitter Saturation Voltage : 2.5 V Maximum Gate Emitter Voltage : +/- 20 V
Continuous Collector Current at 25 C : 60 A Gate-Emitter Leakage Current : +/- 100 nA
Power Dissipation : 200 W Maximum Operating Temperature : + 150 C
Package / Case : TO-247-3 Packaging : Tube    

Description

Collector- Emitter Voltage VCEO Max : 600 V
Maximum Operating Temperature : + 150 C
Packaging : Tube
Configuration : Single
Maximum Gate Emitter Voltage : +/- 20 V
Continuous Collector Current at 25 C : 60 A
Package / Case : TO-247-3
Gate-Emitter Leakage Current : +/- 100 nA
Collector-Emitter Saturation Voltage : 2.5 V
Power Dissipation : 200 W


Features:

 OFF LOSSES INCLUDE TAIL CURRENT
 LOSSES INCLUDE DIODE RECOVERY ENERGY
 HIGH CURRENT CAPABILITY
 HIGH FREQUENCY OPERATION UP TO 50 KHz
 VERY SOFT ULTRA FAST RECOVERY ANTIPARALLEL DIODE
 LOWER CRES /CIES RATIO
 NEW GENERATION PRODUCTS WITH TIGHTER PARAMETER DISTRIBUTION



Application

 HIGH FREQUENCY INVERTERS
 SMPS and PFC IN BOTH HARD SWITCH AND RESONANT TOPOLOGIES
 UPS
 MOTOR DRIVERS



Specifications

Symbol
Parameter
Value
Unit
VCES
Collector-Emitter Voltage (VGS = 0)
600
V

VECR

Emitter-Collector Voltage

20

V

VGE
Gate-Emitter Voltage
± 20
V
IC
Collector Current (continuous) at 25°C (#)
60
A
IC
Collector Current (continuous) at 100°C (#)
30
A
ICM(1)
Collector Current (pulsed)
100
A

If

Diode RMS Forward Current at TC = 25°C

30

A

Ptot
Total Dissipation at Tc = 25 oC
200
W
Derating Factor
0.96
W/oC
Tstg
Storage Temperature
55 to 150
oC
Tj
Operating Junction Temperature
oC



Description

Using the latest high voltage technology based on  a patented strip layout, STGW20NC60VD STMicroelectronics has designed an advanced family of IGBTs, the PowerMESH ™ IGBTs, with outstanding performances. The suffix "V" identifies a family optimized for high frequency applications.




Parameters:

Technical/Catalog InformationSTGW20NC60VD
VendorSTMicroelectronics
CategoryDiscrete Semiconductor Products
Input TypeStandard
Voltage - Collector Emitter Breakdown (Max)600V
Current - Collector (Ic) (Max)60A
Vce(on) (Max) @ Vge, Ic2.5V @ 15V, 20A
Power - Max200W
Mounting TypeThrough Hole
Package / CaseTO-247-3
PackagingTube
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names STGW20NC60VD
STGW20NC60VD
497 4357 5 ND
49743575ND
497-4357-5



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