STGW30N90D

Collector-Emitter Saturation Voltage :
Continuous Collector Current at 25 C :
Gate-Emitter Leakage Current :
Power Dissipation :
Maximum Operating Temperature : + 150 C
Packaging : Tube
Configuration : Single
Package / Case : TO-247-3
Maximum Gate Emitter Voltage : +/- 25 V
Collector- Emitter Voltage VCEO Max : 900 V


Features:

· Low on-losses
· Low on-voltage drop (Vcesat)
· High current capability
· High input impedance (voltage driven)
· Low gate charge
· Ideal for soft switching application


Application

Induction heating


Specifications

Symbol	Parameter	Value	Unit
VCES	Collector-emitter voltage (VGS = 0)	900	V
IC(1)	Collector current (continuous) at 25°C	60	A
IC(1)	Collector current (continuous) at 100°C	30	A
ICL(2)	Collector current (pulsed)	135	A
VGE	Gate-emitter voltage	±25	V
PTOT	Total dissipation at TC = 25°C	220	W
If	Diode RMS forward current at TC = 25°C	30	A
Tj	Operating junction temperature	55 to 150	°C
Tstg	Storage temperature	55 to 150	°C

Description

Using the latest high voltage technology based on its patented strip layout, STGW30N90D STMicroelectronics has designed an advanced family of IGBTs, with outstanding performances.


Parameters:

Technical/Catalog Information	STGW30N90D
Vendor	STMicroelectronics
Category	Discrete Semiconductor Products
Input Type	Standard
Voltage - Collector Emitter Breakdown (Max)	900V
Current - Collector (Ic) (Max)	60A
Vce(on) (Max) @ Vge, Ic	2.75V @ 15V, 20A
Power - Max	220W
Mounting Type	Through Hole
Package / Case	TO-247-3
Packaging	Tube
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	STGW30N90D STGW30N90D 497 7484 5 ND 49774845ND 497-7484-5