STGW30NB60HD

Collector- Emitter Voltage VCEO Max : 600 V
Gate-Emitter Leakage Current : 100 nA
Maximum Operating Temperature : + 150 C
Packaging : Tube
Configuration : Single
Maximum Gate Emitter Voltage : +/- 20 V
Collector-Emitter Saturation Voltage : 2.2 V
Continuous Collector Current at 25 C : 60 A
Package / Case : TO-247-3
Power Dissipation : 190 W


Application

 HIGH FREQUENCY MOTOR CONTROLS
 WELDING EQUIPMENTS
 SMPS AND PFC IN BOTH HARD SWITCH AND RESONANT TOPOLOGIES


Specifications

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Symbol	Parameter	Value	Unit
VCES	Collector-Emitter Voltage (VGS = 0)	600	V
VECR	Emitter-Collector Voltage	20	V
VGE	Gate-Emitter Voltage	± 20	V
IC	Collector Current (continuous) at 25°C	60	A
IC	Collector Current (continuous) at 100°C	30	A
ICM()	Collector Current (pulsed)	240	A
Ptot	Total Dissipation at Tc = 25 oC	190	W
	Derating Factor	1.52	W/oC
Tstg	Storage Temperature	65 to 150	oC
Tj	Max. Operating Junction Temperature	150	oC

Description

Using the latest high voltage technology based on a patented strip layout, STGW30NB60HD STMicroelectronics has designed an advanced family of IGBTs, the PowerMESH] IGBTs, with outstanding perfomances. The suffix "H" identifies a family optimized to achieve very low switching times for high frequency applications (<120kHz).