STGW30NC60VD

Continuous Collector Current at 25 C :
Collector- Emitter Voltage VCEO Max : 600 V
Maximum Operating Temperature : + 150 C
Packaging : Tube
Configuration : Single
Maximum Gate Emitter Voltage : +/- 20 V
Power Dissipation : 250 W
Package / Case : TO-247-3
Collector-Emitter Saturation Voltage : 2.5 V
Gate-Emitter Leakage Current : +/- 100 nA


Features:

High current capability
High frequency operation up to 50KHz
Very soft ultra fast recovery antiparallel diode
New generation products


Application

High frequency inverters, UPS
Motor drivers
SMPS and PFC in both hard switch and resonant topologies


Specifications

Symbol	Parameter	Value	Unit
VCES	Collector-emitter voltage (VGS = 0)	600	V
IC (1)	Collector current (continuous) at 25°C	80	A
IC (1)	Collector current (continuous) at 100°C	40	A
ICM (2)	Collector current (pulsed)	100	A
ICL	Turn-off soa minimum current	100	A
VGE	Gate-emitter voltage	± 20	V
IF	Diode RMS forward current at Tc=25°C	30	A
PTOT	Total dissipation at TC = 25°C	250	W
Tj	Operating junction temperature	55 to 150
Tstg	Storage temperature

Description

Using the latest high voltage technology based on a patented strip layout, STGW30NC60VD STMicroelectronics has designed an advanced family of IGBTs, the PowerMESH™ IGBTs, with outstanding performances. The suffix "V" identifies a family optimized for high frequency.