STGW30NC60W

Collector-Emitter Saturation Voltage :
Continuous Collector Current at 25 C :
Gate-Emitter Leakage Current :
Collector- Emitter Voltage VCEO Max : 600 V
Maximum Operating Temperature : + 150 C
Packaging : Tube
Configuration : Single
Maximum Gate Emitter Voltage : +/- 20 V
Package / Case : TO-247-3
Power Dissipation : 200 W


Features:

VERY LOW OFF LOSSES INCLUDING TAIL CURRENT
LOWER CRES / CIES RATIO
LOSSES INCLUDE DIODE RECOVERY ENERGY
HIGH FREQUENCY OPERATION
VERY SOFT ULTRA FAST RECOVERY ANTI PARALLEL DIODE


Application

HIGH FREQUENCY INVERTERS, UPS, MOTOR DRIVERS
HF, SMPS and PFC IN BOTH HARD SWITCH AND RESONANT TOPOLOGIES


Specifications

Symbol	Parameter	Value	Unit
VCES	Collector-Emitter Voltage (VGS = 0)	600	V
IC	Collector Current (continuous) at 25°C (#)	60	A
IC	Collector Current (continuous) at 100°C (#)	30	A
VECR	Reverse Battery Protection	20	V
VGE	Gate-Emitter Voltage	± 20	V
ICMNote 1	Collector Current (pulsed)	100	A
Ptot	Total Dissipation at Tc = 25 oC	200	W
	Derating Factor	1.6	W/oC
Tstg	Storage Temperature	55 to 150	oC
Tj	Operating Junction Temperature

Description

Using the latest high voltage technology based on a patented strip layout, STGW30NC60W STMicroelectronics has designed an advanced family of IGBTs, the PowerMESH™ IGBTs, with outstanding performances. The suffix "W" identifies a family optimized for very high frequency application.


Parameters:

Technical/Catalog Information	STGW30NC60W
Vendor	STMicroelectronics
Category	Discrete Semiconductor Products
Input Type	Standard
Voltage - Collector Emitter Breakdown (Max)	600V
Current - Collector (Ic) (Max)	60A
Vce(on) (Max) @ Vge, Ic	2.5V @ 15V, 20A
Power - Max	200W
Mounting Type	Through Hole
Package / Case	TO-247-3
Packaging	Tube
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	STGW30NC60W STGW30NC60W 497 5009 5 ND 49750095ND 497-5009-5