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STGW35NB60SD

IGBT Transistors N Ch 35A 600V

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SeekIC No. : 00143348 Detail

STGW35NB60SD: IGBT Transistors N Ch 35A 600V

STGW35NB60SD Data Sheet

floor Price/Ceiling Price

US $ 1.66~2.29 / Piece | Get Latest Price
Part Number:
STGW35NB60SD
Mfg:
STMicroelectronics
Supply Ability:
5000

Price Break

  • Qty
  • 0~335
  • 335~500
  • 500~1000
  • 1000~2000
  • Unit Price
  • $2.29
  • $2.03
  • $1.72
  • $1.66
  • Processing time
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
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Total Cost: $ 0.00

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Upload time: 2025/12/23

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Product Details

Quick Details

Configuration : Single Collector- Emitter Voltage VCEO Max : 600 V
Maximum Gate Emitter Voltage : +/- 20 V Maximum Operating Temperature : + 150 C
Package / Case : TO-247-3 Packaging : Tube    

Description

Collector-Emitter Saturation Voltage :
Continuous Collector Current at 25 C :
Gate-Emitter Leakage Current :
Power Dissipation :
Collector- Emitter Voltage VCEO Max : 600 V
Maximum Operating Temperature : + 150 C
Packaging : Tube
Configuration : Single
Maximum Gate Emitter Voltage : +/- 20 V
Package / Case : TO-247-3


Features:

·LOW ON-VOLTAGE DROP (VCEsat )
·LOW INPUT CAPACITANCE
·HIGH CURRENT CAPABILITY


Application

·LIGHT DIMMER
·HID
·WELDING
·MOTOR CONTROL
·STATIC RELAYS


Specifications

Symbol
Parameter
Value
Unit
VCES
IC Note 4
IC Note 4
ICM Note 1
VGE
If
PTOT
 Collector-Emitter Voltage (VGS = 0)
Collector Current (continuous) at 25
Collector Current (continuous) at 100
Collector Current (pulsed)
Gate-Emitter Voltage
Diode RMS Forward Current at TC = 25
Total Dissipation at TC = 25
600
70
35
250
±20
30
200
V
A
A
A
V
A
W
Tj
 Operating Junction Temperature
-55 to 15
Tstg
 Storage Temperature
TL
 Maximum Lead Temperature for Soldering
Purpose (1.6mm from case, for 10sec.)
300



Description

Using the latest high voltage technology based on a patented strip layout, STGW35NB60SD STMicroelectronics has designed an advanced family of IGBTs, the PowerMESHTM IGBTs, with outstanding performances.




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