Position: Home  > All Categories> Integrated Circuits (ICs) > STGW35NC120HD

STGW35NC120HD

IGBT Transistors PowerMESH IGBT

product image

STGW35NC120HD Picture
See larger image
SeekIC No. : 00142446 Detail

STGW35NC120HD: IGBT Transistors PowerMESH IGBT

STGW35NC120HD Data Sheet

floor Price/Ceiling Price

US $ 4.52~6.91 / Piece | Get Latest Price
Part Number:
STGW35NC120HD
Mfg:
STMicroelectronics
Supply Ability:
5000

Price Break

  • Qty
  • 0~1
  • 1~10
  • 10~100
  • 100~250
  • Unit Price
  • $6.91
  • $6.07
  • $4.97
  • $4.52
  • Processing time
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
View more price & deliveries
Total Cost: $ 0.00

SeekIC Buyer Protection PLUS - newly updated for 2013!

  • Escrow Protection.
  • Guaranteed refunds.
  • Secure payments.
  • Learn more >>

Month Sales

268 Transactions

Rating

evaluate  (4.8 stars)

Upload time: 2025/12/23

add to my favourite

Payment Methods

All payment methods are secure and covered by SeekIC Buyer Protection PLUS.

Notice: When you place an order, your payment is made to SeekIC and not to your seller. SeekIC only pays the seller after confirming you have received your order. We will also never share your payment details with your seller.
Product Details

Quick Details

Configuration : Single Collector- Emitter Voltage VCEO Max : 1200 V
Maximum Gate Emitter Voltage : +/- 25 V Maximum Operating Temperature : + 150 C
Package / Case : TO-247-3 Packaging : Tube    

Description

Collector-Emitter Saturation Voltage :
Continuous Collector Current at 25 C :
Gate-Emitter Leakage Current :
Power Dissipation :
Maximum Operating Temperature : + 150 C
Packaging : Tube
Configuration : Single
Collector- Emitter Voltage VCEO Max : 1200 V
Package / Case : TO-247-3
Maximum Gate Emitter Voltage : +/- 25 V


Features:

· Low on-losses
· Low on-voltage drop (VCE(sat))
· High current capability
· High input impedance (voltage driven)
· Low gate charge
· Ideal for soft switching application



Application

· Induction heating


Specifications

Symbol
Parameter
Value
Unit
VCES
 Collector-emitter voltage (VGE = 0)
1200
V
IC(1)
 Collector current (continuous) at 25
58
A
IC(1)
 Collector current (continuous) at 100
34
A
ICL(2)
 Turn-off latching current
135
A
ICP(3)
 Pulsed collector current
135
A
VGE
 Gate-emitter voltage
±25
V
PTOT
 Total dissipation at TC = 25
220
W
IF
 Diode RMS forward current at TC = 25
30
A
IFSM
 Surge non repetitive forward current tp = 10 ms sinusoidal
100
A
Tj
 Operating junction temperature
55 to 150
Tstg
 Storage temperature


1. Calculated according to the iterative formula:
Connection Diagram
2. Vclamp = 80% of VCES, Tj =150, RG=10 Ω, VGE=15 V
3. Pulse width limited by max. junction temperature allowed




Description

This STGW35NC120HD IGBT utilizes the advanced PowerMESH™ process resulting in an excellent trade-off between switching performance and low on-state behavior.




Parameters:

Technical/Catalog InformationSTGW35NC120HD
VendorSTMicroelectronics
CategoryDiscrete Semiconductor Products
Input TypeStandard
Voltage - Collector Emitter Breakdown (Max)1200V
Current - Collector (Ic) (Max)60A
Vce(on) (Max) @ Vge, Ic2.75V @ 15V, 20A
Power - Max235W
Mounting TypeThrough Hole
Package / CaseTO-247-3
PackagingTube
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names STGW35NC120HD
STGW35NC120HD
497 7487 5 ND
49774875ND
497-7487-5



Customers Who Bought This Item Also Bought

Margin,quality,low-cost products with low minimum orders. Secure your online payments with SeekIC Buyer Protection.
You may also be interested in :
Computers, Office - Components, Accessories
DS-4008HCI
LB104V03(A1)
Integrated Circuits (ICs)
TA8435H
1MB12-140
Optoelectronics
SFH7770
TLP423J
Kits
IT243
UVSC-110-4E1
Discrete Semiconductor Products
T508N12TOF
MUR20040
Semiconductor Modules
2DI300A-050-03
7MBR25SA-120-50
View more