STGW39NC60VD

Continuous Collector Current at 25 C :
Collector- Emitter Voltage VCEO Max : 600 V
Maximum Operating Temperature : + 150 C
Packaging : Tube
Configuration : Single
Maximum Gate Emitter Voltage : +/- 20 V
Power Dissipation : 250 W
Package / Case : TO-247-3
Collector-Emitter Saturation Voltage : 1.8 V/1.7 V
Gate-Emitter Leakage Current : +/- 100 nA


Features:

Low CRES / CIES ratio (no cross conduction susceptibility)
High frequency operation
Very soft ultra fast recovery anti parallel diode


Application

High frequency inverters, ups
Motor drivers
Induction heating


Specifications

Symbol	Parameter	Value	Unit
VCES	Collector-emitter voltage (VGS = 0)	600	V
IC(1)	Collector current (continuous) at 25°C	70	A
IC(1)	Collector current (continuous) at 100°C	40	A
ICL(2)	Collector current (pulsed)	220	A
VGE	Gate-emitter voltage	±20	V
IF	Diode RMS forward current at TC = 25°C	15	A
PTOT	Total dissipation at TC = 25°C	250	W
Tj	Operating junction temperature	55 to 150	°C
Tstg	Storage temperature
TL	Maximum lead temperature for soldering purpose (1.6 mm from case, for 10 sec.)	300	°C

Description

Using the latest high voltage technology based on a patented strip layout, STGW39NC60VD STMicroelectronics has designed an advanced family of IGBTs, the PowerMESH™ IGBTs, with outstanding performances. The suffix "V" identifies a familyoptimized for high frequency application

Parameters:

Technical/Catalog Information	STGW39NC60VD
Vendor	STMicroelectronics
Category	Discrete Semiconductor Products
Input Type	Standard
Voltage - Collector Emitter Breakdown (Max)	600V
Current - Collector (Ic) (Max)	80A
Vce(on) (Max) @ Vge, Ic	2.4V @ 15V, 30A
Power - Max	250W
Mounting Type	Through Hole
Package / Case	TO-247-3
Packaging	Tube
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	STGW39NC60VD STGW39NC60VD 497 5741 ND 4975741ND 497-5741