STGW40NC60V

Collector- Emitter Voltage VCEO Max : 600 V
Maximum Operating Temperature : + 150 C
Packaging : Tube
Configuration : Single
Maximum Gate Emitter Voltage : +/- 20 V
Continuous Collector Current at 25 C : 100 A
Package / Case : TO-247-3
Gate-Emitter Leakage Current : +/- 100 nA
Collector-Emitter Saturation Voltage : 2.5 V
Power Dissipation : 260 W


Application

 HIGH FREQUENCY INVERTERS
 SMPS and PFC IN BOTH HARD SWITCH AND RESONANT TOPOLOGIES
 UPS
 WELDING


Specifications

Symbol	Parameter	Value		Unit
VCES	Collector-Emitter Voltage (VGS = 0)	600		V
VECR	Emitter-Collector Voltage	20		V
VGE	Gate-Emitter Voltage	± 20		V
IC	Collector Current (continuous) at Tc = 25 oC	80		A
IC	Collector Current (continuous) at Tc = 100 oC	50		A
ICM(•)	Collector Current (pulsed)	220		A
Ptot	Total Dissipation at Tc = 25 oC	260		W
	Derating Factor	2.6		W/oC
Tstg	Storage Temperature	55 to 125		oC
Tj	Max.Operating Junction Temperature	125		oC

Description

Using the latest high voltage technology based on a patented strip layout, STGW40NC60V STMicroelectronics has designed an advanced family of IGBTs, the PowerMESH™ IGBTs, with outstanding performances. The suffix "V" identifies a family optimized for high frequency welding and SMPS applications.

Parameters:

Technical/Catalog Information	STGW40NC60V
Vendor	STMicroelectronics
Category	Discrete Semiconductor Products
Input Type	Standard
Voltage - Collector Emitter Breakdown (Max)	600V
Current - Collector (Ic) (Max)	80A
Vce(on) (Max) @ Vge, Ic	2.5V @ 15V, 40A
Power - Max	260W
Mounting Type	Through Hole
Package / Case	TO-247-3
Packaging	Tube
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	STGW40NC60V STGW40NC60V 497 4358 5 ND 49743585ND 497-4358-5