STGW50NB60H

Collector- Emitter Voltage VCEO Max : 600 V
Gate-Emitter Leakage Current : 100 nA
Maximum Operating Temperature : + 150 C
Packaging : Tube
Configuration : Single
Maximum Gate Emitter Voltage : +/- 20 V
Collector-Emitter Saturation Voltage : 2.3 V
Continuous Collector Current at 25 C : 100 A
Power Dissipation : 250 W
Package / Case : TO-247-3


Application

 HIGH FREQUENCY MOTOR CONTROLS
 WELDING EQUIPMENTS
 SMPS AND PFC IN BOTH HARD SWITCH AND RESONANT TOPOLOGIES


Specifications

Symbol	Parameter	Value		Unit
VCES	Collector-Emitter Voltage (VGS = 0)	600		V
VECR	Emitter-Collector Voltage	20		V
VGE	Gate-Emitter Voltage	± 20		V
IC	Collector Current (continuous) at Tc = 25 oC	100		A
IC	Collector Current (continuous) at Tc = 100 oC	50		A
ICM(•)	Collector Current (pulsed)	400		A
Ptot	Total Dissipation at Tc = 25 oC	250		W
	Derating Factor	2		W/oC
Tstg	Storage Temperature	65 to 150		oC
Tj	Max.Operating Junction Temperature	150		oC

Description

Using the latest high voltage technology based on a patented strip layout, STGW50NB60H STMicroelectronics has designed an advanced family of IGBTs, the PowerMESHÔ IGBTs, with outstanding perfomances. The suffix "H" identifies a family optimized to achieve very low switching times for high frequency applications (<120kHz).