ApplicationMOTOR CONTROLWELDING EQUIPMENTSSpecifications Symbol Parameter Value Unit VCES Collector-Emitter Voltage (VGS = 0) 600 V VECR Reverse Battery Protection 20 V VGE Gate-Emitter Voltage ± 20 V IC Collector Current (continuous) a...
STGW50NB60M: ApplicationMOTOR CONTROLWELDING EQUIPMENTSSpecifications Symbol Parameter Value Unit VCES Collector-Emitter Voltage (VGS = 0) 600 V VECR Reverse Battery Protection...
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|
Symbol |
Parameter |
Value |
Unit | |
|
VCES |
Collector-Emitter Voltage (VGS = 0) |
600 |
V | |
|
VECR |
Reverse Battery Protection |
20 |
V | |
|
VGE |
Gate-Emitter Voltage |
± 20 |
V | |
|
IC |
Collector Current (continuous) at Tc = 25 oC |
100 |
A | |
|
IC |
Collector Current (continuous) at Tc = 100 oC |
50 |
A | |
|
ICM(•) |
Collector Current (pulsed) |
400 |
A | |
|
Ptot |
Total Dissipation at Tc = 25 oC |
250 |
W | |
| Derating Factor |
2 |
W/oC | ||
|
Tstg |
Storage Temperature |
65 to 150 |
oC
| |
|
Tj |
Max.Operating Junction Temperature |
150 |
oC | |
Using the latest high voltage technology based on a patented strip layout, STGW50NB60M STMicroelectronics has designed an advanced family of IGBTs, the Power- MESH™ IGBTs, with outstanding performances. The suffix "M" identifies a family optimized to achieve very low saturation on voltage for frequency applications <10 KHz.