STGW50NB60M Selling Leads, Price trend, STGW50NB60M DataSheet download, circuit diagram from SeekIC.com

ApplicationMOTOR CONTROLWELDING EQUIPMENTSSpecifications Symbol Parameter Value Unit VCES Collector-Emitter Voltage (VGS = 0) 600 V VECR Reverse Battery Protection 20 V VGE Gate-Emitter Voltage ± 20 V IC Collector Current (continuous) a...

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STGW50NB60M: ApplicationMOTOR CONTROLWELDING EQUIPMENTSSpecifications Symbol Parameter Value Unit VCES Collector-Emitter Voltage (VGS = 0) 600 V VECR Reverse Battery Protection...

STGW50NB60M Data Sheet

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Part Number:: STGW50NB60M
Supply Ability:: 5000

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1~5000

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Upload time: 2025/12/23

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US $.59 - .8 / Piece

IGBT Transistors 19 A 600V FAST IGBT

Product Details

Description

Application

MOTOR CONTROL
WELDING EQUIPMENTS

Specifications

Symbol	Parameter	Value	Unit
V_CES	Collector-Emitter Voltage (V_GS= 0)	600	V
V_ECR	Reverse Battery Protection	20	V
V_GE	Gate-Emitter Voltage	± 20	V
I_C	Collector Current (continuous) at T_c= 25 ^oC	100	A
I_C	Collector Current (continuous) at T_c= 100 ^oC	50	A
I_CM(•)	Collector Current (pulsed)	400	A
P_tot	Total Dissipation at T_c= 25 ^oC	250	W
	Derating Factor	2	W/^oC
T_stg	Storage Temperature	65 to 150	^oC
T_j	Max.Operating Junction Temperature	150	^oC

Description

Using the latest high voltage technology based on a patented strip layout, STGW50NB60M STMicroelectronics has designed an advanced family of IGBTs, the Power- MESH™ IGBTs, with outstanding performances. The suffix "M" identifies a family optimized to achieve very low saturation on voltage for frequency applications <10 KHz.

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STGW50NB60M

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