Application· Designed for application in fiber-optic networks· Laser Diode with Multi-Quantum Well structure· Suitable for bit rates up to 1 Gbit/s· Ternary photodiode at rear mirror for monitoring and control of radiant power· Hermetically sealed subcomponent, similar to TO 18· with integrated Si...
STH51002Z: Application· Designed for application in fiber-optic networks· Laser Diode with Multi-Quantum Well structure· Suitable for bit rates up to 1 Gbit/s· Ternary photodiode at rear mirror for monitoring ...
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|
Module |
Symbol |
Values |
Unit |
|
Operating Temperature range at case |
TC |
- 40... +85 |
°C |
|
Storage Temperature range |
Tstg |
- 40... +85 |
°C |
|
tmax = 10 s, 2 mm distance from bottom edge of case |
TS |
260 |
°C |
| Laserdiode |
Symbol |
Values |
Unit |
| Direct forward current |
IF max |
120 |
mA |
| Radiant power CW |
CW Fe |
10 |
mW |
| Reverse Voltage |
VR max |
2 |
V |
| Monitor Diode |
Symbol |
Values |
Unit |
| Reverse Voltage |
VR max |
10 |
V |