STH8N80

The features of STH8N80: (1)typical RDS(on)=0.98; (2)avalanche rugged technology; (3)100% avalanche tested; (4)repetitive avalanche data 100; (5)low input capacitance; (6)low gate change; (7)application oriented characterization.

The absolute maximum ratings of the STH8N80 are: (1)Drain-source Voltage (VGS = 0): 800 V ; (2)Drain- gate Voltage (RGS = 20 k): 800 V ; (3)Gate-Source Voltage: ±20 V ; (4)Drain Current (continuous) at Tc = 25 : 8.2 A  ; (5)Drain Current (continuous) at Tc = 100 : 5.1 A ; (6)Drain Current (pulsed): 35 A ; (7)Total Dissipation at Tc = 25 : 180 W ; (8)Derating Factor: 1.44 W/ ; (9)Storage Temperature: -65 to 150   ; (10)Operating Junction Temperature: 150 .

The following is about the electrical characteristics of STH8N80: (1)drain-source: 800V min at ID=250A, VGS=0; (2)zero gate voltage: 250A max at VDS= max rating; (3)drain current: 1000A max at  VDS= max rating * 0.8, Tc=125; (4)gate-body leakage current: ±100nA max at VGS=±20V.