STH8NB90FI

Transistor Polarity : N-Channel
Configuration : Single
Mounting Style : Through Hole
Maximum Operating Temperature : + 150 C
Packaging : Tube
Gate-Source Breakdown Voltage : +/- 30 V
Drain-Source Breakdown Voltage : 900 V
Continuous Drain Current : 5 A
Resistance Drain-Source RDS (on) : 1.1 Ohms
Package / Case : ISOWATT 218


Application

 HIGH CURRENT, HIGH SPEED SWITCHING
 SWITH MODE POWER SUPPLIES (SMPS)
 DC-AC CONVERTERS FOR WELDING EQUIPMENT


Specifications

Symbol	Parameter	Value		Unit
		STW8NB90	STH8NB90FI
VDS	Drain-source Voltage (VGS = 0)	900		V
VDGR	Drain-gate Voltage (RGS = 20 kW)	900		V
VGS	Gate- source Voltage	±30		V
ID	Drain Current (continuos) at TC = 25°C	8	5	A
ID	Drain Current (continuos) at TC = 100°C	5	3	A
IDM ()	Drain Current (pulsed)	32	20	A
PTOT	Total Dissipation at TC = 25°C	200	80	W
	Derating Factor	1.6	0.64	W/°C
dv/dt (1)	Peak Diode Recovery voltage slope	4	4	V/ns
VISO	Insulation Withstand Voltage (DC)	-	2500	V
Tstg	Storage Temperature	65 to 150		°C
Tj	Max. Operating Junction Temperature	150		°C

Description

Using the latest high voltage MESH OVERLAY™ process, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company's proprieraty edge termination structure, gives the lowest RDS(on) per area, exceptional avalanche and dv/dt capabilities and unrivalled gate charge and switching characteristics.