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STH81002Z

Application· Designed for application in fiber-optic networks· Laser Diode with Multi-Quantum Well structure· Suitable for bit rates up to 1 Gbit/s· Ternary photodiode at rear mirror for monitoring and control of radiant power· Hermetically sealed subcomponent, similar to TO 18· with integrated Si...

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SeekIC No. : 004507707 Detail

STH81002Z: Application· Designed for application in fiber-optic networks· Laser Diode with Multi-Quantum Well structure· Suitable for bit rates up to 1 Gbit/s· Ternary photodiode at rear mirror for monitoring ...

STH81002Z Data Sheet

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Part Number:
STH81002Z
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2025/12/23

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Product Details

Description



Application

· Designed for application in fiber-optic networks
· Laser Diode with Multi-Quantum Well structure
· Suitable for bit rates up to 1 Gbit/s
· Ternary photodiode at rear mirror for monitoring and control of radiant power
· Hermetically sealed subcomponent, similar to TO 18
· with integrated Silicon-Optics for high coupling efficiencies Maximum




Specifications

Module

Symbol

Values

Unit

Operating Temperature range at case

TC

- 40... +85

°C

Storage Temperature range

Tstg

- 40... +85

°C

tmax = 10 s, 2 mm distance from bottom edge of case

TS

260

°C





 

 

 

 

 

 

Laserdiode
Symbol
Values
Unit
Direct forward current
IF max
120
mA
Radiant power
CW Fe
10
mW
Reverse Voltage
VR max
2
V
Monitor Diode
Symbol
Values
Unit
Reverse Voltage
VR max
10
V



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