STI10N62K3, US $ .55-1.3, STI10N62K3 DataSheet download, circuit diagram from SeekIC.com

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SeekIC No. : 003432571 Detail

STI10N62K3: MOSFET N-CH 60V 8.4A I2PAK

STI10N62K3 Data Sheet

US $ .55~1.3 / Piece | Get Latest Price

Part Number:: STI10N62K3
Mfg:
Supply Ability:: 5000

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$1.3
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$.95
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$.55

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Upload time: 2024/5/7

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Product Details

Quick Details

Series:	SuperMESH3™	Manufacturer:	STMicroelectronics
FET Type:	MOSFET N-Channel, Metal Oxide	Transistor Type:	-
Gain :	19.5 dB	Current - Collector (Ic) (Max):	-
FET Feature:	Standard	Drain to Source Voltage (Vdss):	620V
Voltage - Collector Emitter Breakdown (Max):	-	Current - Continuous Drain (Id) @ 25° C:	8.4A
Vce Saturation (Max) @ Ib, Ic:	-	Current - Collector Cutoff (Max):	-
Rds On (Max) @ Id, Vgs:	750 mOhm @ 4A, 10V	DC Current Gain (hFE) (Min) @ Ic, Vce:	-
Vgs(th) (Max) @ Id:	4.5V @ 100µA	Gate Charge (Qg) @ Vgs:	42nC @ 10V
Frequency - Transition:	-	Input Capacitance (Ciss) @ Vds:	1250pF @ 50V
Power - Max:	125W	Mounting Type:	Through Hole
Package / Case:	TO-262-3 Long Leads, I²Pak, TO-262AA	Supplier Device Package:	I2PAK

Description

FET Type: MOSFET N-Channel, Metal Oxide
Transistor Type: -
Current - Collector (Ic) (Max): -
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
FET Feature: Standard
Vgs(th) (Max) @ Id: 4.5V @ 100µA
Gate Charge (Qg) @ Vgs: 42nC @ 10V
Current - Continuous Drain (Id) @ 25° C: 8.4A
Packaging: Tube
Mounting Type: Through Hole
Input Capacitance (Ciss) @ Vds: 1250pF @ 50V
Power - Max: 125W
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Supplier Device Package: I2PAK
Manufacturer: STMicroelectronics
Series: SuperMESH3™
Drain to Source Voltage (Vdss): 620V
Rds On (Max) @ Id, Vgs: 750 mOhm @ 4A, 10V

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STI10N62K3

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