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STI11NM60ND

MOSFET N-Ch, 600V-0.37ohms FDMesh 10A

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SeekIC No. : 00162867 Detail

STI11NM60ND: MOSFET N-Ch, 600V-0.37ohms FDMesh 10A

STI11NM60ND Data Sheet

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Part Number:
STI11NM60ND
Mfg:
STMicroelectronics
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 600 V
Gate-Source Breakdown Voltage : +/- 25 V Continuous Drain Current : 10 A
Resistance Drain-Source RDS (on) : 0.45 Ohms Configuration : Single
Maximum Operating Temperature : + 150 C Mounting Style : SMD/SMT
Package / Case : I2PAK Packaging : Tube    

Description

Transistor Polarity : N-Channel
Configuration : Single
Mounting Style : SMD/SMT
Maximum Operating Temperature : + 150 C
Packaging : Tube
Drain-Source Breakdown Voltage : 600 V
Continuous Drain Current : 10 A
Package / Case : I2PAK
Gate-Source Breakdown Voltage : +/- 25 V
Resistance Drain-Source RDS (on) : 0.45 Ohms


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