TRANSISTOR NPN 400V 1.5A SOT-82
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| Series: | - | Manufacturer: | STMicroelectronics | ||
| Transistor Type: | NPN | Current - Collector (Ic) (Max): | 1.5A | ||
| Voltage - Collector Emitter Breakdown (Max): | 400V | Resistor - Base (R1) (Ohms): | - | ||
| Vce Saturation (Max) @ Ib, Ic: | 1.5V @ 500mA, 1.5A | Current - Collector Cutoff (Max): | 5mA | ||
| Resistor - Emitter Base (R2) (Ohms): | - | DC Current Gain (hFE) (Min) @ Ic, Vce: | 5 @ 1A, 2V | ||
| Series : | ESD5V0S | Power - Max: | 40W | ||
| Frequency - Transition: | - | Mounting Type: | Through Hole | ||
| Package / Case: | SOT-82 | Supplier Device Package: | SOT-82-3 |
|
Symbol |
Parameter |
Value |
Unit |
|
VCES |
Collector-Emitter Voltage (VBE = 0) |
700 |
V |
|
VCEO |
Collector-Emitter Voltage (IB = 0) |
400 |
V |
|
VEBO |
Emitter-Base Voltage(IC = 0,IB = 0.75 A, tp < 10ms, Tj < 150) |
BVEBO |
V |
|
IC |
Collector Current |
1.5 |
A |
|
ICM |
Collector Peak Current (tp < 5 ms) |
3 |
A |
|
IB |
Base Current |
0.75 |
A |
|
IBM |
Base Peak Current (tp < 5 ms) |
1.5 |
A |
|
Ptot |
Total Power Dissipation at Tc = 25 |
40 |
W |
|
Tstg |
Storage Temperature |
-65 to 150 |
|
|
Tj |
Max. Operating Junction Temperature |
150 |
The device is manufactured using high voltage Multi Epitaxial Planar technology for high switching speeds and medium voltage capability.
It uses a Cellular Emitter structure with planar edge termination to enhance switching speeds while maintaining the wide RBSOA.
The device is designed for use in lighting applications and low cost switch-mode power supplies.