STK13003

TRANSISTOR NPN 400V 1.5A SOT-82

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STK13003 Picture
SeekIC No. : 003436697 Detail

STK13003: TRANSISTOR NPN 400V 1.5A SOT-82

floor Price/Ceiling Price

US $ .12~.4 / Piece | Get Latest Price
Part Number:
STK13003
Mfg:
Supply Ability:
5000

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  • Unit Price
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  • Processing time
  • 15 Days
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Total Cost: $ 0.00

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Upload time: 2025/12/23

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Product Details

Quick Details

Series: - Manufacturer: STMicroelectronics
Transistor Type: NPN Current - Collector (Ic) (Max): 1.5A
Voltage - Collector Emitter Breakdown (Max): 400V Resistor - Base (R1) (Ohms): -
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 500mA, 1.5A Current - Collector Cutoff (Max): 5mA
Resistor - Emitter Base (R2) (Ohms): - DC Current Gain (hFE) (Min) @ Ic, Vce: 5 @ 1A, 2V
Series : ESD5V0S Power - Max: 40W
Frequency - Transition: - Mounting Type: Through Hole
Package / Case: SOT-82 Supplier Device Package: SOT-82-3    

Description

Series: -
Transistor Type: NPN
Resistor - Base (R1) (Ohms): -
Resistor - Emitter Base (R2) (Ohms): -
Frequency - Transition: -
Mounting Type: Through Hole
Current - Collector (Ic) (Max): 1.5A
Voltage - Collector Emitter Breakdown (Max): 400V
Packaging: Tube
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 500mA, 1.5A
DC Current Gain (hFE) (Min) @ Ic, Vce: 5 @ 1A, 2V
Manufacturer: STMicroelectronics
Power - Max: 40W
Current - Collector Cutoff (Max): 5mA
Package / Case: SOT-82
Supplier Device Package: SOT-82-3


Features:

· STK13003 IS REVERSE PINS OUT Vs STANDARD SOT-82 PACKAGE
· MEDIUM VOLTAGE CAPABILITY
· LOW SPREAD OF DYNAMIC PARAMETERS
· MINIMUM LOT-TO-LOT SPREAD FOR RELIABLE OPERATION
· VERY HIGH SWITCHING SPEED



Application

· ELECTRONIC BALLASTS FOR FLUORESCENT LIGHTING
· SWITCH MODE POWER SUPPLIES



Specifications

Symbol
Parameter
Value
Unit
VCES
Collector-Emitter Voltage (VBE = 0)
700
V
VCEO
Collector-Emitter Voltage (IB = 0)
400
V
VEBO
Emitter-Base Voltage(IC = 0,IB = 0.75 A, tp < 10ms, Tj < 150)
BVEBO
V
IC
Collector Current
1.5
A
ICM
Collector Peak Current (tp < 5 ms)
3
A
IB
Base Current
0.75
A
IBM
Base Peak Current (tp < 5 ms)
1.5
A
Ptot
Total Power Dissipation at Tc = 25
40
W
Tstg
Storage Temperature
-65 to 150
Tj
Max. Operating Junction Temperature
150



Description

The device is manufactured using high voltage Multi Epitaxial Planar technology for high switching speeds and medium voltage capability.

It uses a Cellular Emitter structure with planar edge termination to enhance switching speeds while maintaining the wide RBSOA.

The device is designed for use in lighting applications and low cost switch-mode power supplies.




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