MOSFET N-Ch 30 Volt 28 Amp
SeekIC Buyer Protection PLUS - newly updated for 2013!
268 Transactions
All payment methods are secure and covered by SeekIC Buyer Protection PLUS.
| Transistor Polarity : | N-Channel | Drain-Source Breakdown Voltage : | 30 V | ||
| Gate-Source Breakdown Voltage : | +/- 16 V | Continuous Drain Current : | 28 A | ||
| Resistance Drain-Source RDS (on) : | 0.0065 Ohms | Configuration : | Single | ||
| Maximum Operating Temperature : | + 150 C | Mounting Style : | SMD/SMT | ||
| Package / Case : | PowerFLAT | Packaging : | Reel |
| Symbol | Parameter | Value | Unit |
| VDS | Drain-source Voltage (VGS = 0) | 30 | V |
| VDGR | Drain-gate Voltage (RGS = 20 k ) | 30 | V |
| VGS | Gate- source Voltage | ± 16 | V |
| ID(#) | Drain Current (continuos) at TC = 25(Steady State) Drain Current (continuos) at TC = 100 |
28 17.5 |
A A |
| IDM() | Drain Current (pulsed) | 112 | A |
| PTOT | Total Dissipation at TC = 25 | 80 | W |
| Derating Factor(2) | 0.64 | W/ | |
| EAS (1) | Single Pulse Avalanche Energy | 2 | J |
| Tstg | Storage Temperature | 55 to 150 | |
| Tj | Max. Operating Junction Temperature |
This STL28NF3LL Power MOSFET is the second generation of STMicroelectronics unique "STripFET™" technology.The resulting transistor shows extremely low onresistance and minimal gate charge. The new PowerFLAT ™ package allows a significant reduction in board space without compromising performance.