Features: ·Super high dense cell design for low RDS(ON).·Rugged and reliable.·Suface Mount Package.·ESD Protected.PinoutSpecifications Symbol Parameter Limit Units VDSVGS Gate-Source VoltageDrain-Source Voltage 30±20 VV ID Drain Current-Continuous a TA=25 9.6 A TA=70 7.7 ...
STM4880: Features: ·Super high dense cell design for low RDS(ON).·Rugged and reliable.·Suface Mount Package.·ESD Protected.PinoutSpecifications Symbol Parameter Limit Units VDSVGS Gate-Source Vol...
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| Symbol | Parameter | Limit | Units | |
| VDS VGS |
Gate-Source Voltage Drain-Source Voltage |
30 ±20 |
V V | |
| ID | Drain Current-Continuous a | TA=25 | 9.6 | A |
| TA=70 | 7.7 | A | ||
| IDM EAS |
-Pulsed b Sigle Pulse Avalanche Energy d |
40 20 |
mJ A | |
| PD | Maximum Power Dissipation a | TA=25 | 2.5 | W |
| TA=70 | 1.6 | W | ||
| TJ, TSTG | Operating Junction and Storage Temperature Range |
-55 to 150 | ||