Features: ·Super high dense cell design for low R DS (ON).·Rugged and reliable.·Surface Mount P ackage.PinoutSpecifications Parameter Symbol Limit Unit Drain-S ource Voltage VDS -30 V Gate-S ource Voltage VGS ±30 V Drain Current-Continuous @ TJ=25 -Pulsed...
STM4953: Features: ·Super high dense cell design for low R DS (ON).·Rugged and reliable.·Surface Mount P ackage.PinoutSpecifications Parameter Symbol Limit Unit Drain-S ource Voltage VD...
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|
Parameter |
Symbol |
Limit |
Unit |
| Drain-S ource Voltage |
VDS |
-30 |
V |
| Gate-S ource Voltage |
VGS |
±30 |
V |
| Drain Current-Continuous @ TJ=25 -Pulsed |
ID |
-4.5 |
A |
|
IDM |
-23 |
A | |
| Drain-S ource Diode Forward Current |
IS |
1.7 |
A |
| Maximum Power Dissipation |
PD |
2 |
W |
| Operating Junction and S torage Temperature R ange |
TJ,TSTG |
-55 to 150 |
|