STN1NK60Z

MOSFET N-Ch 600 Volt 0.25A Zener SuperMESH

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SeekIC No. : 00146842 Detail

STN1NK60Z: MOSFET N-Ch 600 Volt 0.25A Zener SuperMESH

floor Price/Ceiling Price

US $ .25~.43 / Piece | Get Latest Price
Part Number:
STN1NK60Z
Mfg:
STMicroelectronics
Supply Ability:
5000

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  • 10~100
  • 100~250
  • Unit Price
  • $.43
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  • $.25
  • Processing time
  • 15 Days
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Total Cost: $ 0.00

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Upload time: 2024/5/5

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 600 V
Gate-Source Breakdown Voltage : +/- 30 V Continuous Drain Current : 0.3 A
Resistance Drain-Source RDS (on) : 15000 mOhms Configuration : Single Dual Drain
Maximum Operating Temperature : + 150 C Mounting Style : SMD/SMT
Package / Case : SOT-223 Packaging : Reel    

Description

Transistor Polarity : N-Channel
Mounting Style : SMD/SMT
Packaging : Reel
Maximum Operating Temperature : + 150 C
Gate-Source Breakdown Voltage : +/- 30 V
Drain-Source Breakdown Voltage : 600 V
Package / Case : SOT-223
Configuration : Single Dual Drain
Continuous Drain Current : 0.3 A
Resistance Drain-Source RDS (on) : 15000 mOhms


Features:

` TYPICAL RDS(on) = 13
` EXTREMELY HIGH dv/dt CAPABILITY
` ESD IMPROVED CAPABILITY
` 100% AVALANCHE TESTED
` NEW HIGH VOLTAGE BENCHMARK
` GATE CHARGE MINIMIZED



Application

· AC ADAPTORS AND BATTERY CHARGERS
· SWITH MODE POWER SUPPLIES (SMPS)



Specifications

Symbol Parameter
Value
Unit
IPAK
TO-92
SOT-223
VDS Collector-Source Voltage (VGS = 0 V)
600
V
VDGR Drain-gate Voltage (RGS = 20 k)

600

V
VGS Gate-Source Voltage
±30
V
ID Drain Current (continuous) at TC = 25

0.8

0.3

0.3

A
ID Drain Current (continuous) at TC = 100

0.5

0.189

0.189

A
IDM(`) Drain Current (pulsed)

3.2

1.2

1.2

A
PTOT Total Dissipation at TC = 25

25

3

3.3

W
  Derating Factor

0.24

0.025

0.026

W/
VESD(G-S) Gate source ESD(HBM-C=100pF, R=1.5K)
800
V
dv/dt(1) Peak Diode Recovery voltage slope
4.5
V/ns
Tj
Tstg
Operating Junction Temperature
Storage Temperature
-55 to 150
(•) Pulse width limited by safe operating area.
(1) ISD 0.3A, di/dt 200A/s, VDD V(BR)DSS, Tj TJMAX


Description

The SuperMESH™ STN1NK60Z series is obtained through an extreme optimization of ST's well established strip-based PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Such series complements ST full range of high voltage MOSFETs including revolutionary MDmesh™ products.




Parameters:

Technical/Catalog InformationSTN1NK60Z
VendorSTMicroelectronics
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET PolarityN-Channel
Drain to Source Voltage (Vdss)600V
Current - Continuous Drain (Id) @ 25° C300mA
Rds On (Max) @ Id, Vgs15 Ohm @ 400mA, 10V
Input Capacitance (Ciss) @ Vds 94pF @ 25V
Power - Max3.3W
PackagingTape & Reel (TR)
Gate Charge (Qg) @ Vgs6.9nC @ 10V
Package / CaseSOT-223, SC-73, TO-261 (3 Leads + Tab)
FET FeatureStandard
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names STN1NK60Z
STN1NK60Z
497 3523 2 ND
49735232ND
497-3523-2



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